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High-voltage parallel writing on iron nitride thin films
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View: Figures


Image of FIG. 1.
FIG. 1.

Optical image of a portion of the silicon stamp consisting of dense arrays of features with synthetic shapes illustrated in the top row. The height of the features is 730 nm.

Image of FIG. 2.
FIG. 2.

(A) General representation of the parallel writing technique. (B) Schematic of pattern formation on ZrN and a corresponding SPM image of 70 nm oxide structures (bright). (C) Schematic of pattern formation on a 15-nm-thick FeN film using the same stamp. The oxide dissolves during the process resulting in FeN features (appearing bright in the SPM image) separated by areas of exposed silicon. The film thickness is equal to the feature height obtained from the cross sections.

Image of FIG. 3.
FIG. 3.

XPS survey scans of 80-nm-thick iron films sputtered with 0 and 5 SCCM flow rates of nitrogen. Argon sputtering is performed to obtain spectra of the bulk. Optical images of the corresponding patterns formed by applying 300 V for 30 s are shown on the right.

Image of FIG. 4.
FIG. 4.

(A) Optical image of two types of arrays next to each other generated on an 80-nm-thick FeN film. Matching SPM images and cross sections of (B) features with outward triangular and (C) straight end caps are also shown.

Image of FIG. 5.
FIG. 5.

Simultaneous (A) SPM and (B) MFM images of a patterned 20-nm-thick FeN film deposited by sputtering. Matching (C) SPM and (D) MFM images of a patterned 20-nm-thick iron deposited by evaporation. The exposed silicon substrate appears dark in both SPM images.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-voltage parallel writing on iron nitride thin films