Production of a hafnium silicate dielectric layer for use as a gate oxide by solid-state reaction
Hf XPS data for films annealed to the indicated temperatures. The feature shifts to deeper BE upon annealing and sharpens as the suboxide component is eliminated. (a) 9.0 ML thermal ; (b) 1.0 ML native .
Hf XPS data and fit for sample annealed to . A Shirley background has been subtracted. The data may be explained by a single doublet characteristic of hafnium silicate.
Si XPS data for films annealed to the indicated temperatures. The feature associated with silicon oxide at shifts to shallower BE upon annealing, indicating charge transfer to the Si–O complexes. The charge transfer implies that the silicate/silicon interface will be stable against formation. (a) 9.0 ML thermal ; (b) 1.0 ML native .
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