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Production of a hafnium silicate dielectric layer for use as a gate oxide by solid-state reaction
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10.1116/1.2180274
/content/avs/journal/jvsta/24/4/10.1116/1.2180274
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/24/4/10.1116/1.2180274
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Hf XPS data for films annealed to the indicated temperatures. The feature shifts to deeper BE upon annealing and sharpens as the suboxide component is eliminated. (a) 9.0 ML thermal ; (b) 1.0 ML native .

Image of FIG. 2.
FIG. 2.

Hf XPS data and fit for sample annealed to . A Shirley background has been subtracted. The data may be explained by a single doublet characteristic of hafnium silicate.

Image of FIG. 3.
FIG. 3.

Si XPS data for films annealed to the indicated temperatures. The feature associated with silicon oxide at shifts to shallower BE upon annealing, indicating charge transfer to the Si–O complexes. The charge transfer implies that the silicate/silicon interface will be stable against formation. (a) 9.0 ML thermal ; (b) 1.0 ML native .

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/content/avs/journal/jvsta/24/4/10.1116/1.2180274
2006-06-21
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Production of a hafnium silicate dielectric layer for use as a gate oxide by solid-state reaction
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/24/4/10.1116/1.2180274
10.1116/1.2180274
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