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Low-voltage resistive switching of polycrystalline thin films grown on Si substrates by off-axis rf sputtering
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View: Figures


Image of FIG. 1.
FIG. 1.

Schematic of a -based MIM structure.

Image of FIG. 2.
FIG. 2.

XRD pattern of the Cr-doped layered structure grown on a Si substrate by off-axis rf sputtering. The thickness of and layers are 80 and , respectively.

Image of FIG. 3.
FIG. 3.

FE-SEM surface morphology of the Cr-doped thin film grown on SRO deposited-STO substrate.

Image of FIG. 4.
FIG. 4.

Cross-sectional TEM image of the Cr-doped structure.

Image of FIG. 5.
FIG. 5.

characteristic of the polycrystalline -based MIM structure. The thickness of thin film is and the size of the Pt top electrode is in diameter. (The arrows indicate the direction of voltage sweep.)

Image of FIG. 6.
FIG. 6.

(a) Variation in resistive switching voltages and (b) deviation of resistance values of on and off states of polycrystalline thin film with repetition of resistive switching behavior. (The resistive switching voltage from the high- to the low-resistance state is called the set voltage and that from the low- to the high-resistance state is called the reset voltage.)

Image of FIG. 7.
FIG. 7.

Retention characteristics of high- and low-resistance states of -based MIM structure. Retention test was performed at . The SZO:Cr film was grown under pure Ar sputtering gas. The size of Pt top electrode is in diameter.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-voltage resistive switching of polycrystalline SrZrO3:Cr thin films grown on Si substrates by off-axis rf sputtering