Low-voltage resistive switching of polycrystalline thin films grown on Si substrates by off-axis rf sputtering
Schematic of a -based MIM structure.
XRD pattern of the Cr-doped layered structure grown on a Si substrate by off-axis rf sputtering. The thickness of and layers are 80 and , respectively.
FE-SEM surface morphology of the Cr-doped thin film grown on SRO deposited-STO substrate.
Cross-sectional TEM image of the Cr-doped structure.
characteristic of the polycrystalline -based MIM structure. The thickness of thin film is and the size of the Pt top electrode is in diameter. (The arrows indicate the direction of voltage sweep.)
(a) Variation in resistive switching voltages and (b) deviation of resistance values of on and off states of polycrystalline thin film with repetition of resistive switching behavior. (The resistive switching voltage from the high- to the low-resistance state is called the set voltage and that from the low- to the high-resistance state is called the reset voltage.)
Retention characteristics of high- and low-resistance states of -based MIM structure. Retention test was performed at . The SZO:Cr film was grown under pure Ar sputtering gas. The size of Pt top electrode is in diameter.
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