Silicon dioxide etching process for fabrication of micro-optics employing pulse-modulated electron-beam-excited plasma
Schematic of an experimental setup with a pulse-modulated EBEP or dc EBEP.
Surface temperature of the etched substrate as a function of the duty ratio of .
(a)Distribution of the ion current densities and (b) FWHM of distribution of the ion current densities as a function of the duty ratio of .
Time resolved optical emission intensity as a function of the duty ratio of , (a) Ar optical emission intensity, (b) F optical emission intensity, and (c) optical emission intensity.
Comparison between the time resolved Ar emission intensity and the time resolved emission intensity.
Time averaged optical emission intensity around the ultraviolet region.
and F densities as a function of the duty ratio of measured by actinometry.
Scanning electron microscope (SEM) image of etched profiles of the patterned substrate, etched profile of (a) center and (b) edge areas on the etched substrate surface with dc controlled EBEP, and etched profile of (c) center and (d) edge areas on the etched substrate surface with pulse-modulated EBEP.
Process sequence for fabrication of the end surface of the optical fiber.
Microfabrication of core area in diameter on end surface of optical fiber. (a) SEM image of etched optical fiber and (b) enlargement of (a).
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