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Sputtering yield measurements at glancing incidence using a quartz crystal microbalance
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10.1116/1.2435375
/content/avs/journal/jvsta/25/2/10.1116/1.2435375
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/25/2/10.1116/1.2435375

Figures

Image of FIG. 1.
FIG. 1.

Sputtering facility schematic.

Image of FIG. 2.
FIG. 2.

Ion beam diagnostics.

Image of FIG. 3.
FIG. 3.

Pretest and post-test beam current density profile for ions.

Image of FIG. 4.
FIG. 4.

Constant current lines (nA) for a ion beam, mapped as a function of deflection voltage.

Image of FIG. 5.
FIG. 5.

SEM image revealing surface topography of a Mo film.

Image of FIG. 6.
FIG. 6.

SEM image of a cross section of a crystal fractured in liquid nitrogen.

Image of FIG. 7.
FIG. 7.

X-ray diffraction scans of Mo coated and blank QCMs.

Image of FIG. 8.
FIG. 8.

Measured Mo film thickness change during bombardment by ions.

Image of FIG. 9.
FIG. 9.

normal incidence sputtering yield measurements for .

Image of FIG. 10.
FIG. 10.

Cu and W sputtering yield measurements for ion bombardment at normal incidence.

Image of FIG. 11.
FIG. 11.

Sputtering yield variation for as a function of angle of incidence.

Tables

Generic image for table
TABLE I.

Cu and W film deposition parameters.

Generic image for table
TABLE II.

Normal incidence yield measurements.

Generic image for table
TABLE III.

Angular dependence of sputtering yields.

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/content/avs/journal/jvsta/25/2/10.1116/1.2435375
2007-01-26
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Sputtering yield measurements at glancing incidence using a quartz crystal microbalance
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/25/2/10.1116/1.2435375
10.1116/1.2435375
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