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Effect of on the low pressure chemical vapor deposition of film at low temperature using tetrakis(diethylamino)titanium and oxygen
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10.1116/1.2699121
/content/avs/journal/jvsta/25/2/10.1116/1.2699121
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/25/2/10.1116/1.2699121

Figures

Image of FIG. 1.
FIG. 1.

Growth rate of film as a function of TDEAT flow rate for the films deposited from at under . The flow rates of and not being investigated were maintained constant at 5 and . The thickness of the film was measured with spectropic ellipsometry.

Image of FIG. 2.
FIG. 2.

Arrhenius plots of the growth rate of films deposited from and under at TDEAT flow rates of 0.008 and . The flow rates of and were 5 and , respectively. The addition of increases deposition rate.

Image of FIG. 3.
FIG. 3.

XPS spectra of films collected at 90° take-off angle deposited (a) with and (b) without at temperatures and pressure of . The flow rates of TDEAT, , and were 0.008, 5, and , respectively. The addition of enhances the formation of TiN and TiNO bonds but has no effect on the incorporation of C–N bond.

Image of FIG. 4.
FIG. 4.

XPS spectra of films collected at 90° take-off angle. Films were deposited at and (a) with and (b) without . The flow rates of TDEAT, , and were 0.008, 5, and , respectively.

Image of FIG. 5.
FIG. 5.

spectra of films at take-off angle collected (a) before sputtering and (b) after sputtering showing C–N homogeneously distributed along the film while NO is just a surface feature. The film was deposited with at under . The flow rates of TDEAT, , and were 0.008, 5, and , respectively.

Image of FIG. 6.
FIG. 6.

spectra of films at take-off angle collected (a) before sputtering and (b) after sputtering, and (c) enlarged spectra after sputtering indicating that carbon is mainly surface contamination. The film was deposited with at under . The flow rates of TDEAT, , and were 0.008, 5, and , respectively.

Image of FIG. 7.
FIG. 7.

XPS depth profiles of films deposited at under (a) with and (b) without , indicating uniform distribution of the elements along the depth of the film. The variation in the element composition near the surface is due to carbon surface contamination. The flow rates of TDEAT, , and were 0.008, 5, and , respectively.

Image of FIG. 8.
FIG. 8.

atomic ratio obtained from XPS analysis as a function of sputtering time. The films were deposited at under with/without . The flow rates of TDEAT, , and were 0.008, 5, and , respectively. The gradually decreasing atomic ratio is due to the preferential removal of oxygen during sputtering.

Image of FIG. 9.
FIG. 9.

Comparison of atomic ratio derived from XPS analysis for films deposited at under with/without . The flow rates of TDEAT, , and were 0.008, 5, and , respectively. The films deposited with have lower ratio than the ones without , and the ratio in both films decreases with temperature.

Image of FIG. 10.
FIG. 10.

TOF-SIMS depth profile of film deposited using at and . The flow rates of TDEAT, , and were 0.008, 5, and , respectively. The elements of oxygen, nitrogen, and carbon are uniformly distributed along the film depth.

Tables

Generic image for table
TABLE I.

Nitrogen at. % in film derived from XPS analysis at 90°, take-off angle. The films were deposited from and under .

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/content/avs/journal/jvsta/25/2/10.1116/1.2699121
2007-02-28
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of NH3 on the low pressure chemical vapor deposition of TiO2 film at low temperature using tetrakis(diethylamino)titanium and oxygen
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/25/2/10.1116/1.2699121
10.1116/1.2699121
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