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Structural and electrical characteristics of microcrystalline silicon prepared by hot-wire chemical vapor deposition using a graphite filament
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10.1116/1.2716671
/content/avs/journal/jvsta/25/3/10.1116/1.2716671
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/25/3/10.1116/1.2716671
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Dark conductivity and photoconductivity as a function of silane concentration.

Image of FIG. 2.
FIG. 2.

Deposition rate as a function of silane concentration.

Image of FIG. 3.
FIG. 3.

Raman spectra at 1.0%, 1.2%, and 1.4% silane concentrations.

Image of FIG. 4.
FIG. 4.

Crystalline fraction measured at different silane concentrations.

Image of FIG. 5.
FIG. 5.

FTIR spectra from films grown at 1.0% and 2.0% silane concentrations.

Image of FIG. 6.
FIG. 6.

TEM bright-field image and selected area electron diffraction pattern for a film deposited at 1.2% silane concentration.

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/content/avs/journal/jvsta/25/3/10.1116/1.2716671
2007-03-26
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural and electrical characteristics of microcrystalline silicon prepared by hot-wire chemical vapor deposition using a graphite filament
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/25/3/10.1116/1.2716671
10.1116/1.2716671
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