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Influence of the film properties on the plasma etching dynamics of rf-sputtered indium zinc oxide layers
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10.1116/1.2736679
/content/avs/journal/jvsta/25/4/10.1116/1.2736679
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/25/4/10.1116/1.2736679

Figures

Image of FIG. 1.
FIG. 1.

RBS spectra from the IZO film grown using the target under room-temperature conditions. A SIMNRA simulation is also shown for comparison.

Image of FIG. 2.
FIG. 2.

Concentration fraction of O, Zn, and In atoms in the as-deposited IZO layers obtained by RBS. The full symbols are for RT deposition, whereas the open ones correspond to IZO films deposited at . The composition of the target (full line) is also shown for comparison.

Image of FIG. 3.
FIG. 3.

Depth profiles obtained from the ERD measurements for IZO films grown using the target at either (a) room temperature or (b) .

Image of FIG. 4.
FIG. 4.

XRD spectra from IZO films deposited at either (a) room temperature or (b) .

Image of FIG. 5.
FIG. 5.

Influence of the indium concentration fraction on the sputter-etch yield of IZO films obtained in a pure argon plasma. The full symbols are for RT deposition, whereas the open ones correspond to IZO films deposited at . The results from our Monte Carlo simulations are also shown for comparison.

Image of FIG. 6.
FIG. 6.

Influence of the indium concentration on the normalized sputter-etch yield of IZO films.

Image of FIG. 7.
FIG. 7.

Influence of the indium concentration on the etch yield of IZO films obtained in plasmas. The full symbols are for RT deposition, whereas the open ones correspond to IZO films deposited at .

Image of FIG. 8.
FIG. 8.

Influence of the indium concentration on the etch yield of IZO films obtained in plasmas. The full symbols are for RT deposition, whereas the open ones correspond to IZO films deposited at .

Image of FIG. 9.
FIG. 9.

Influence of the indium concentration on the calculated IZO etch yield.

Tables

Generic image for table
TABLE I.

Binding energies used in the Monte Carlo simulations.

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/content/avs/journal/jvsta/25/4/10.1116/1.2736679
2007-05-14
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of the film properties on the plasma etching dynamics of rf-sputtered indium zinc oxide layers
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/25/4/10.1116/1.2736679
10.1116/1.2736679
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