In situ attenuated total reflectance Fourier transform infrared spectroscopy of hafnium (IV) tert butoxide adsorption onto hydrogen terminated Si (100) and Si (111)
Experimental setup for in situ characterization of CVD reactions.
Three dimensional atomic groups for calculated spectra (a) bridged HtB on a H terminated Si cluster; (b) monodentate HtB on H terminated Si with one O–H termination; and (c) the HtB molecule.
OH stretch region for different temperatures at saturation on (a) Si (100) and (b) Si (111). No film is the spectrum of a clean ATR crystal after in atmosphere at room temperature.
O–H, C–H, and C–O stretching regions for (a) liquid HtB at ; (b) adsorbed HtB at ; (c) adsorbed HtB at ; and (d) liquid t-butanol at on Si (100).
HtB spectra of (a) monodentate model; (b) bridged model; (c) liquid HtB on Ge; (d) adsorbed HtB on Ge. (a), (b) and (c) are at , and (d) is at .
(a) C–H stretch of adsorbed HtB on Si (111) at , showing Fourier self-deconvoluted peaks. [(b) and (c)] Deconvoluted C–H stretching at various temperatures on Si (100) and Si (111), respectively.
Spectra of adsorbed HtB at saturation for different substrate temperatures on (a) Si(100) and (b) Si(111).
Growth of OH group, CH stretching, CH bending, and characteristic bridged bond with time at on (a) Si(100) and (b) Si(111). The solid lines refer to the primary axis and the dashed to the secondary axis.
Area of peak between 3118 and (CH stretch) vs time for varying crystal temperatures. (a) Si(100) and (b) Si(111).
Arrhenius plot for the CH stretch integrated absorbance from on Si(100) and Si(111).
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