Etching characteristics and mechanism of thin films in inductively coupled plasma
Comparison of melting points for the GST etch products in chlorine-containing plasmas.
GST etch rate (1) and negative dc bias on the substrate (2) as functions of operating parameters: (a) as functions of mixing ratio (, , and ); (b) as functions of input power (, 71% Ar, and ); (c) as functions of gas pressure (71% Ar, , and ). The lines are to guide the eye only.
Electron temperature (1) and total positive ion density (2) as functions of mixing ratio at , , and . The lines are to guide the eye only.
Model-predicted densities of neutral and charged species as functions of mixing ratio. The conditions are , , and .
Model-predicted variations of etch kinetics for different etch regimes (a) as well as the comparison between experimental and calculated etch rates in relative scales (b): 1, 2, fraction of chlorinated surface; 3, 4, rate of ion-assisted chemical reaction (1, 4, for and 2, 3 for ); 5, experimental etch rate; 6, calculated etch rate. The conditions correspond to Fig. 2(a).
XPS narrow scan spectra of Te for as-deposited (1) and etched (2-4) GST films: (2) 43% Ar, (3) 57% Ar, and (4) 86% Ar. The etching conditions correspond to Fig. 2(a).
Reaction set for plasma modeling. For R1-R9, rate coefficient is in and is in eV.
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