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Etching characteristics and mechanism of thin films in inductively coupled plasma
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10.1116/1.2831502
/content/avs/journal/jvsta/26/2/10.1116/1.2831502
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/26/2/10.1116/1.2831502

Figures

Image of FIG. 1.
FIG. 1.

Comparison of melting points for the GST etch products in chlorine-containing plasmas.

Image of FIG. 2.
FIG. 2.

GST etch rate (1) and negative dc bias on the substrate (2) as functions of operating parameters: (a) as functions of mixing ratio (, , and ); (b) as functions of input power (, 71% Ar, and ); (c) as functions of gas pressure (71% Ar, , and ). The lines are to guide the eye only.

Image of FIG. 3.
FIG. 3.

Electron temperature (1) and total positive ion density (2) as functions of mixing ratio at , , and . The lines are to guide the eye only.

Image of FIG. 4.
FIG. 4.

Model-predicted densities of neutral and charged species as functions of mixing ratio. The conditions are , , and .

Image of FIG. 5.
FIG. 5.

Model-predicted variations of etch kinetics for different etch regimes (a) as well as the comparison between experimental and calculated etch rates in relative scales (b): 1, 2, fraction of chlorinated surface; 3, 4, rate of ion-assisted chemical reaction (1, 4, for and 2, 3 for ); 5, experimental etch rate; 6, calculated etch rate. The conditions correspond to Fig. 2(a).

Image of FIG. 6.
FIG. 6.

XPS narrow scan spectra of Te for as-deposited (1) and etched (2-4) GST films: (2) 43% Ar, (3) 57% Ar, and (4) 86% Ar. The etching conditions correspond to Fig. 2(a).

Tables

Generic image for table
TABLE I.

Reaction set for plasma modeling. For R1-R9, rate coefficient is in and is in eV.

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/content/avs/journal/jvsta/26/2/10.1116/1.2831502
2008-01-18
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Etching characteristics and mechanism of Ge2Sb2Te5 thin films in inductively coupled Cl2∕Ar plasma
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/26/2/10.1116/1.2831502
10.1116/1.2831502
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