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Effect of gas mixing ratio on etch behavior of thin films in inductively coupled plasma
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10.1116/1.2891255
/content/avs/journal/jvsta/26/3/10.1116/1.2891255
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/26/3/10.1116/1.2891255

Figures

Image of FIG. 1.
FIG. 1.

Experimental (1) and model-predicted (2) etch rates and negative dc bias (3) as functions of mixing ratio ( , , , and ). The model parameters are , , and .

Image of FIG. 2.
FIG. 2.

Characteristics of electron gas (a) and rate coefficients of electron impact processes (b) as functions of mixing ratio ( , , , and ). (a) (1) electron temperature and (2) collisional power loss per one electron.

Image of FIG. 3.
FIG. 3.

Measured (1) and model-predicted (2–4) densities of charged species as functions of mixing ratio: (1) total density of positive ions, (2) , (3) electrons, and (4) . The conditions are the same with Figs. 1 and 2 .

Image of FIG. 4.
FIG. 4.

Model-predicted densities of neutral species as functions of mixing ratio. The conditions are the same with Figs. 2 and 3 .

Image of FIG. 5.
FIG. 5.

Model-predicted fractions of chlorinated surface (a) and the relative rates of ion-assisted chemical reaction ( , where corresponds to pure plasma) (b) as functions of mixing ratio: (1) , (2) , and (3) . The conditions are the same with Figs. 2 and 3 . The other model parameters are and .

Tables

Generic image for table
TABLE I.

Reaction set for the modeling of plasma.

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/content/avs/journal/jvsta/26/3/10.1116/1.2891255
2008-03-26
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of gas mixing ratio on etch behavior of ZrO2 thin films in BCl3∕He inductively coupled plasma
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/26/3/10.1116/1.2891255
10.1116/1.2891255
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