Ion beam deposition of tantalum pentoxide thin film at room temperature
Schematic drawing of the ion beam setup.
SEM image of a metallic Ta film deposited with at and an Ar pressure of .
Composition as a function of the oxygen partial pressure. Two sets of data are shown: after 3 and of sputtering, respectively. The two horizontal lines represent the stoichiometry of .
AFM measurement of a film obtained with an oxygen partial pressure of .
FTIR spectra of a series of films with the oxygen partial pressure as parameter. The spectra have been offset along the axis for clarity. The peaks labeled (1)–(4) are discussed in the text. The vertical line is situated at .
Growth rate and refractive index as a function of the oxygen partial pressure.
UV-VIS transmission spectra of a series of samples for which the oxygen partial pressure has been varied. The oxygen content of the samples is given also. Additionally, the transmission of a bare glass substrate is shown.
Deposition parameters used throughout this investigation.
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