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Fabrication and characterization of a pentacene thin film transistor with a polymer insulator as a gate dielectric
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10.1116/1.2889434
/content/avs/journal/jvsta/26/4/10.1116/1.2889434
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/26/4/10.1116/1.2889434

Figures

Image of FIG. 1.
FIG. 1.

Schematic device structure of OTFT.

Image of FIG. 2.
FIG. 2.

(a) Breakdown voltage and (b) dielectric constant as a function of thickness for (a) 6%, (b) 7%, and (c) 8% PVCN.

Image of FIG. 3.
FIG. 3.

Leakage current density as a function of voltage for (a) 6%, (b) 7%, and (c) 8% PVCN.

Image of FIG. 4.
FIG. 4.

AFM topologies of (a) 6%, (b) 7%, and (c) 8% PVCN.

Image of FIG. 5.
FIG. 5.

(a) Topology, (b) current image , (c) curves at grains, and (d) curves at grain boundaries of pentacene thin film grown on 6% PVCN.

Image of FIG. 6.
FIG. 6.

(a) Topology, (b) current image , (c) curves at grains, and (d) curves at grain boundaries of pentacene thin film grown on 7% PVCN.

Image of FIG. 7.
FIG. 7.

(a) Topology, (b) current image , (c) curves at grains, and (d) curves at grain boundaries of pentacene thin film grown on 8% PVCN.

Image of FIG. 8.
FIG. 8.

(a) characteristics and (b) transfer characteristics of the pentacene TFT with PVCN 6% as a gate dielectric.

Image of FIG. 9.
FIG. 9.

(a) characteristics and (b) transfer characteristics of the pentacene TFT with PVCN 7% as a gate dielectric.

Image of FIG. 10.
FIG. 10.

(a) characteristics and (b) transfer characteristics of the pentacene TFT with PVCN 8% as a gate dielectric.

Tables

Generic image for table
TABLE I.

Leakage current measured at a pentacene grain and grain boundary (tip ).

Generic image for table
TABLE II.

Extracted parameters of three different types of OTFT with PVCN gate dielectrics.

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/content/avs/journal/jvsta/26/4/10.1116/1.2889434
2008-06-30
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication and characterization of a pentacene thin film transistor with a polymer insulator as a gate dielectric
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/26/4/10.1116/1.2889434
10.1116/1.2889434
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