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Dry etching of extreme ultraviolet lithography mask structures in inductively coupled plasmas
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10.1116/1.2902964
/content/avs/journal/jvsta/26/4/10.1116/1.2902964
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/26/4/10.1116/1.2902964
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of the EUVL absorber mask used in this study.

Image of FIG. 2.
FIG. 2.

(a) Etch rate and etch selectivity of (ARC) and TaN (absorber). (b) Etch rate and etch selectivity of TaN (absorber) and Ru (buffer/capping layer). (c) Cross-sectional FESEM image of etched Ru (buffer/capping layer) at the flow ratio of 0.9.

Image of FIG. 3.
FIG. 3.

Etch depth of mask stack with a positive photoresist (PR) obtained at different etch times.

Image of FIG. 4.
FIG. 4.

(a) Cross-sectional focused ion beam (FIB) FESEM image of the etched e-beam patterned absorber mask stack with a line/space pattern. (b) Top-down FESEM image of the absorber mask stack with a line/space e-beam resist pattern etched at .

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/content/avs/journal/jvsta/26/4/10.1116/1.2902964
2008-07-01
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dry etching of extreme ultraviolet lithography mask structures in inductively coupled plasmas
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/26/4/10.1116/1.2902964
10.1116/1.2902964
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