Schematic diagram of the EUVL absorber mask used in this study.
(a) Etch rate and etch selectivity of (ARC) and TaN (absorber). (b) Etch rate and etch selectivity of TaN (absorber) and Ru (buffer/capping layer). (c) Cross-sectional FESEM image of etched Ru (buffer/capping layer) at the flow ratio of 0.9.
Etch depth of mask stack with a positive photoresist (PR) obtained at different etch times.
(a) Cross-sectional focused ion beam (FIB) FESEM image of the etched e-beam patterned absorber mask stack with a line/space pattern. (b) Top-down FESEM image of the absorber mask stack with a line/space e-beam resist pattern etched at .
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