Silane injection in a high-density low-pressure plasma system and its influence on the deposition kinetics and material properties of
Position of the jet injection system and substrate used during deposition. Measurements were done at four points on the fused silica substrate, located at (a) , (b) , (c) , and (d) along the injection plane.
Dependence between the thickness-normalized SiOH absorption peak intensity and deposition rate for four depositions using , with measurements taken at four different positions along the surface. microwave power, no rf bias and pressure was used, unless indicated otherwise.
Optical emission intensities for different radicals when increasing the microwave power, with a low Ar flow added for actinometry. The gas flows and pressure was kept constant at , , and .
Optical emission intensities of the atomic oxygen radical when increasing the microwave power, for a deposition plasma and a plasma, both at pressure with a low Ar flow added for actinometry.
SiOH absorption peak intensity and deposition rate measurements taken at four points along the injection plane as indicated in Fig. 1, for two depositions done at 1 and microwave power, respectively. An gas mixture was used at a pressure of .
Thickness-normalized FTIR measurements of three depositions with and at pressure and microwave power, with 0, , and rf bias applied to the substrate holder (S signifies the stretching vibration mode).
Optical emission intensities for different radicals in a plasma with microwave power and pressure, when increasing the applied rf bias. A low Ar flow was added in order to perform actinometry.
Thickness-normalized absorption spectra of the SiOH band in two silica films grown with zero self-bias (no rf) and self-bias, respectively. The gas mixture consisted of and , at a pressure and microwave power.
Deposition rate profiles on wafers along the injection plane as indicated in Fig. 1, for depositions done with the gas flow set to 1, 2, 4, 8, and , respectively. microwave power, , and a pressure of were used during these depositions.
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