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Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
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10.1116/1.2966430
/content/avs/journal/jvsta/26/5/10.1116/1.2966430
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/26/5/10.1116/1.2966430
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic illustration of the silicon oxide and hafnium oxide deposition cycle ratios and (b) and film thickness measured by ellipsometry and XPS as a function of PEALD cycles.

Image of FIG. 2.
FIG. 2.

Optical emission spectra of (a) a PEALD HTB/O process at an oxygen flow rate of 2.5 SCCM, (b) a PEALD TEOS/O process at an oxygen flow rate of 5 SCCM, and (c) a PECVD plasma with an (Ar carrier gas) ratio of 2 at a total pressure of 15 mTorr.

Image of FIG. 3.
FIG. 3.

Ex situ ATR-FTIR absorbance spectra of the PEALD deposited (a) film on a ZnSe ATR crystal and (b) film on a KRS-5 crystal.

Image of FIG. 4.
FIG. 4.

The XPS analysis of PEALD , , and Hf-silicate films: (a) , (b) , (c) XPS spectra, and (d) Hf, Si, O, and C atomic percentage as a function of .

Image of FIG. 5.
FIG. 5.

SIMS depth profiles of Hf-silicate films deposited at of (a) 2:1 (6.5 nm) and (b) 1:3 (6 nm), respectively.

Image of FIG. 6.
FIG. 6.

GIXRD of the (a) as-grown and (b) annealed Hf-silicate films deposited at of 2:1 (6.5 nm), 1:1 (7.2 nm), 1:2 (5.6 nm), and 1:3 (6 nm), respectively.

Image of FIG. 7.
FIG. 7.

(a) Capacitance-voltage characteristic for the MOS capacitors fabricated using PEALD as-deposited Hf-silicate films, and the inset shows the dielectric constants of (Ref. 30) and Hf-silicate films as a function of . (b) Leakage current density as a function of applied voltage to MOS capacitors with PEALD Hf-silicate films deposited as a function of .

Image of FIG. 8.
FIG. 8.

Band gap of (Ref. 5) and Hf-silicate films deposited at of 2:1, 1:1, 1:2, and 1:3, respectively. The panel on the right shows the corresponding plasmon loss spectra, from which the band gaps were determined.

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/content/avs/journal/jvsta/26/5/10.1116/1.2966430
2008-08-20
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/26/5/10.1116/1.2966430
10.1116/1.2966430
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