Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
(a) Schematic illustration of the silicon oxide and hafnium oxide deposition cycle ratios and (b) and film thickness measured by ellipsometry and XPS as a function of PEALD cycles.
Optical emission spectra of (a) a PEALD HTB/O process at an oxygen flow rate of 2.5 SCCM, (b) a PEALD TEOS/O process at an oxygen flow rate of 5 SCCM, and (c) a PECVD plasma with an (Ar carrier gas) ratio of 2 at a total pressure of 15 mTorr.
Ex situ ATR-FTIR absorbance spectra of the PEALD deposited (a) film on a ZnSe ATR crystal and (b) film on a KRS-5 crystal.
The XPS analysis of PEALD , , and Hf-silicate films: (a) , (b) , (c) XPS spectra, and (d) Hf, Si, O, and C atomic percentage as a function of .
SIMS depth profiles of Hf-silicate films deposited at of (a) 2:1 (6.5 nm) and (b) 1:3 (6 nm), respectively.
GIXRD of the (a) as-grown and (b) annealed Hf-silicate films deposited at of 2:1 (6.5 nm), 1:1 (7.2 nm), 1:2 (5.6 nm), and 1:3 (6 nm), respectively.
(a) Capacitance-voltage characteristic for the MOS capacitors fabricated using PEALD as-deposited Hf-silicate films, and the inset shows the dielectric constants of (Ref. 30) and Hf-silicate films as a function of . (b) Leakage current density as a function of applied voltage to MOS capacitors with PEALD Hf-silicate films deposited as a function of .
Band gap of (Ref. 5) and Hf-silicate films deposited at of 2:1, 1:1, 1:2, and 1:3, respectively. The panel on the right shows the corresponding plasmon loss spectra, from which the band gaps were determined.
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