(a) Schematic illustration of the silicon oxide and hafnium oxide deposition cycle ratios and (b) and film thickness measured by ellipsometry and XPS as a function of PEALD cycles.
Optical emission spectra of (a) a PEALD HTB/O process at an oxygen flow rate of 2.5 SCCM, (b) a PEALD TEOS/O process at an oxygen flow rate of 5 SCCM, and (c) a PECVD plasma with an (Ar carrier gas) ratio of 2 at a total pressure of 15 mTorr.
Ex situ ATR-FTIR absorbance spectra of the PEALD deposited (a) film on a ZnSe ATR crystal and (b) film on a KRS-5 crystal.
The XPS analysis of PEALD , , and Hf-silicate films: (a) , (b) , (c) XPS spectra, and (d) Hf, Si, O, and C atomic percentage as a function of .
SIMS depth profiles of Hf-silicate films deposited at of (a) 2:1 (6.5 nm) and (b) 1:3 (6 nm), respectively.
GIXRD of the (a) as-grown and (b) annealed Hf-silicate films deposited at of 2:1 (6.5 nm), 1:1 (7.2 nm), 1:2 (5.6 nm), and 1:3 (6 nm), respectively.
(a) Capacitance-voltage characteristic for the MOS capacitors fabricated using PEALD as-deposited Hf-silicate films, and the inset shows the dielectric constants of (Ref. 30) and Hf-silicate films as a function of . (b) Leakage current density as a function of applied voltage to MOS capacitors with PEALD Hf-silicate films deposited as a function of .
Band gap of (Ref. 5) and Hf-silicate films deposited at of 2:1, 1:1, 1:2, and 1:3, respectively. The panel on the right shows the corresponding plasmon loss spectra, from which the band gaps were determined.
Article metrics loading...
Full text loading...