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Effect of gas mixing ratio on etch behavior of thin films in -based inductively coupled plasmas
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10.1116/1.2998806
/content/avs/journal/jvsta/26/6/10.1116/1.2998806
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/26/6/10.1116/1.2998806
/content/avs/journal/jvsta/26/6/10.1116/1.2998806
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/content/avs/journal/jvsta/26/6/10.1116/1.2998806
2008-10-30
2014-08-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of gas mixing ratio on etch behavior of ZrO2 thin films in Cl2-based inductively coupled plasmas
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/26/6/10.1116/1.2998806
10.1116/1.2998806
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