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Effect of gas mixing ratio on etch behavior of thin films in -based inductively coupled plasmas
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10.1116/1.2998806
/content/avs/journal/jvsta/26/6/10.1116/1.2998806
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/26/6/10.1116/1.2998806

Figures

Image of FIG. 1.
FIG. 1.

Measured etch rate (a) and negative dc bias (b) as functions of the additive gas fraction in the , , and plasmas. The lines are to guide the eyes only.

Image of FIG. 2.
FIG. 2.

Measured electron temperatures (a) and measured and model-predicted densities of charged species (b) as functions of the additive gas fraction in the , , and plasmas. In (a), the lines are to guide the eyes only. In (b), the symbols are the measured , and the lines are the model predicted .

Image of FIG. 3.
FIG. 3.

Comparison of measured (symbols) and model-predicted (lines) Cl atom densities (a) and ion current densities (b) as functions of the additive gas fraction in the , , and plasmas.

Image of FIG. 4.
FIG. 4.

Model-predicted relative rates of ion-assisted chemical reaction (, where corresponds to pure plasma) as functions of the additive gas fraction in the , , and plasmas.

Tables

Generic image for table
TABLE I.

Simplified reaction set for the modeling of , , and plasmas.

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/content/avs/journal/jvsta/26/6/10.1116/1.2998806
2008-10-30
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of gas mixing ratio on etch behavior of ZrO2 thin films in Cl2-based inductively coupled plasmas
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/26/6/10.1116/1.2998806
10.1116/1.2998806
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