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Effect of oxygen on growth and properties of diamond thin film deposited at low surface temperature
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10.1116/1.2998807
/content/avs/journal/jvsta/26/6/10.1116/1.2998807
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/26/6/10.1116/1.2998807

Figures

Image of FIG. 1.
FIG. 1.

Glancing angle x-ray diffraction patterns from diamond films at room temperature in the range 10°–150° using radiation.

Image of FIG. 2.
FIG. 2.

ESEM images of the films grown in (a) no oxygen, (b) 0.25% oxygen, (c) 0.50% oxygen, and (d) 0.75% oxygen at surface temperatures of on Si(100) substrates at a total pressure of and power. The insets show the cross-sectional SEM photo of the respective films.

Image of FIG. 3.
FIG. 3.

Optical emission spectrum (OES) from the plasma environment taken at microwave power and total gas pressure during diamond deposition with varying addition from 0% to 0.75% in the plasma. The arrows indicate relative intensities from the and emissions.

Image of FIG. 4.
FIG. 4.

Dependence of the relative intensity of to emissions, , and growth rate on oxygen addition in the plasma.

Image of FIG. 5.
FIG. 5.

Effect of oxygen in the plasma on the optical emission spectrum (OES) from the plasma environment taken at microwave power and total gas pressure during diamond deposition in the plasma. The arrows indicate intensities from the and CO emissions.

Image of FIG. 6.
FIG. 6.

Effect of oxygen addition on the micro-Raman spectra from the low surface temperature deposited diamond films on (100) Si substrates. The films were deposited at gas pressure, power, and using the plasma.

Image of FIG. 7.
FIG. 7.

Fitting of the experimental Raman spectrum with a combination of Lorentzian and Gaussian functions for a representative sample with 0.75% oxygen. The deconvoluted peaks are represented by solid lines.

Image of FIG. 8.
FIG. 8.

spectrum before Ar etching in 0.75% showing argon deposited within the film with increased oxygen content in the plasma.

Image of FIG. 9.
FIG. 9.

spectra, before and after Ar etching, showing the effect of oxygen addition on the XPS peak shape and position.

Tables

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TABLE I.

Process parameters used to deposit diamond films on Si (100) substrates using (60–59.25)% Ar, 39% , (0–0.75)% , and 1% by volume. The total gas volume was .

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TABLE II.

Influence of oxygen addition in the plasma on the quality of diamond films.

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TABLE III.

Atomic concentrations (%) in 0% , 0.25% , and 0.75% containing diamond film measured by XPS before and after etching the surface with Ar plasma for .

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TABLE IV.

% area of the peaks estimated from the XPS data on the oxygenated diamond films.

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TABLE V.

Uncorrected location for primary elemental peaks in the oxygented diamond films after etching the surface with Ar plasma for .

Generic image for table
TABLE VI.

FWHM values for primary elemental peaks in the oxygented diamond films after etching the surface with Ar plasma for .

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/content/avs/journal/jvsta/26/6/10.1116/1.2998807
2008-10-30
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of oxygen on growth and properties of diamond thin film deposited at low surface temperature
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/26/6/10.1116/1.2998807
10.1116/1.2998807
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