Glancing angle x-ray diffraction patterns from diamond films at room temperature in the range 10°–150° using radiation.
ESEM images of the films grown in (a) no oxygen, (b) 0.25% oxygen, (c) 0.50% oxygen, and (d) 0.75% oxygen at surface temperatures of on Si(100) substrates at a total pressure of and power. The insets show the cross-sectional SEM photo of the respective films.
Optical emission spectrum (OES) from the plasma environment taken at microwave power and total gas pressure during diamond deposition with varying addition from 0% to 0.75% in the plasma. The arrows indicate relative intensities from the and emissions.
Dependence of the relative intensity of to emissions, , and growth rate on oxygen addition in the plasma.
Effect of oxygen in the plasma on the optical emission spectrum (OES) from the plasma environment taken at microwave power and total gas pressure during diamond deposition in the plasma. The arrows indicate intensities from the and CO emissions.
Effect of oxygen addition on the micro-Raman spectra from the low surface temperature deposited diamond films on (100) Si substrates. The films were deposited at gas pressure, power, and using the plasma.
Fitting of the experimental Raman spectrum with a combination of Lorentzian and Gaussian functions for a representative sample with 0.75% oxygen. The deconvoluted peaks are represented by solid lines.
spectrum before Ar etching in 0.75% showing argon deposited within the film with increased oxygen content in the plasma.
spectra, before and after Ar etching, showing the effect of oxygen addition on the XPS peak shape and position.
Process parameters used to deposit diamond films on Si (100) substrates using (60–59.25)% Ar, 39% , (0–0.75)% , and 1% by volume. The total gas volume was .
Influence of oxygen addition in the plasma on the quality of diamond films.
Atomic concentrations (%) in 0% , 0.25% , and 0.75% containing diamond film measured by XPS before and after etching the surface with Ar plasma for .
% area of the peaks estimated from the XPS data on the oxygenated diamond films.
Uncorrected location for primary elemental peaks in the oxygented diamond films after etching the surface with Ar plasma for .
FWHM values for primary elemental peaks in the oxygented diamond films after etching the surface with Ar plasma for .
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