Characterization of low-temperature silicon nitride films produced by inductively coupled plasma chemical vapor deposition
Schematic diagram of the ICP-CVD reactor.
FTIR spectra of the silicon nitride films.
Photographs of the etched pits on silicon wafers revealing the pin holes on (a) the 500 and (b) silicon nitride films (the calibrated size of the pictures are ).
AFM images of (a) the low-temperature silicon nitride film and (b) the PlasmaTherm silicon nitride film.
curves of a low-temperature silicon nitride film: (a) the complete curves on a logarithm and square-root coordinate and (b) the low electrical field part of the curves on a linear coordinate system.
curves of the low-temperature silicon nitride film obtained from (a) electrode pads, (b) electrode pads, and (c) electrode pads.
Comparison of the breakdown strengths of the low-temperature silicon nitride films produced at the microwave powers of 500, 800, and .
curves of the low-temperature silicon nitride films produced at the microwave powers of (a) 500, (b) 800, and (c) .
Ideal curves of the MIS structure without fixed charges and interface charge traps.
Extraction of interface charge trap levels: (a) the measured and ideal curves and (b) the density of interface charge trap levels versus the band bending in the silicon surface layer.
Area RMS roughness of the low-temperature and conventional silicon nitride films.
Calculated densities of interface charge trap levels and fixed charges of the films.
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