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Plasma etching of Hf-based high- thin films. Part I. Effect of complex ions and radicals on the surface reactions
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10.1116/1.3065679
/content/avs/journal/jvsta/27/2/10.1116/1.3065679
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/27/2/10.1116/1.3065679

Figures

Image of FIG. 1.
FIG. 1.

Variations of electron temperature, ion and electron densities, and atomic to molecular chlorine ion ratio as a function of changing source microwave power (a)–(c), and as a function of chamber pressure (d)–(f), in a plasma.

Image of FIG. 2.
FIG. 2.

Variation of QMS-measured plasma ionic species as a function of (a) power and (b) pressure, and the variation of OES-measured plasma species as a function of (c) power and (d) pressure in a chlorine plasma at 3 mTorr and 500 W (the high density baseline condition). The dotted lines are for guiding the eyes only.

Image of FIG. 3.
FIG. 3.

Variation of (a) electron temperature and (b) ion and electron densities as a function of increasing % in a plasma.

Image of FIG. 4.
FIG. 4.

OES-measured plasma species are shown in (a) and (b), and QMS-measured plasma ionic species are shown in (c) and (d). Higher mass ionic species measured by QMS are shown in (e) and (f). The data in the left column are taken at the 3 mTorr and 500 W (high density plasma condition) while that in the right column are taken at 5 mTorr and 300 W (low density plasma condition).

Image of FIG. 5.
FIG. 5.

Dependence of electron temperature on (a) power and (b) pressure, and ion and electron densities on (c) power and (d) pressure in a plasma.

Image of FIG. 6.
FIG. 6.

QMS-measured percentages of ionic species in a plasma at (a) 3 mTorr, (b) 500 W, (c) 5 mTorr, and (d) 300 W as a function of power or pressure. The ionic species include (○), (◼), (◇), (◆), (△), (●), and (◻).

Image of FIG. 7.
FIG. 7.

QMS detected integrated intensities of primary etch products, , , , and , as a function of the square root of ion energy during etching of in a pure plasma at 3 mTorr and 500 W. The inset shows the etch rate of under the same conditions.

Image of FIG. 8.
FIG. 8.

QMS detected integrated intensities of primary etch products , , , , , and as a function of the square root of ion energy during the etching of in a pure plasma at 3 mTorr and 500 W. The inset shows the etch rate of under the same conditions.

Tables

Generic image for table
TABLE I.

Wavelength and transitions for atomic and molecular emissions in plasmas (Ref. 19).

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/content/avs/journal/jvsta/27/2/10.1116/1.3065679
2009-02-06
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Plasma etching of Hf-based high-k thin films. Part I. Effect of complex ions and radicals on the surface reactions
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/27/2/10.1116/1.3065679
10.1116/1.3065679
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