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Plasma etching of Hf-based high- thin films. Part II. Ion-enhanced surface reaction mechanisms
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10.1116/1.3065695
/content/avs/journal/jvsta/27/2/10.1116/1.3065695
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/27/2/10.1116/1.3065695

Figures

Image of FIG. 1.
FIG. 1.

Etch rate of (▲), (○), (◆), (◻), and (◼) films as a function of the square root of ion energy in a pure plasma at 3 mTorr and 500 W. The dashed lines are linear fits to guide the eyes.

Image of FIG. 2.
FIG. 2.

Effect of plasma chemistry on etch rate. The etch rates of (▲), (○), (◆), (◻), and (◼) films as a function of the percentage in plasma at (a) 3 mTorr, 500 W and (b) 5 mTorr, 300 W, and an ion energy of 75 eV. The relative abundance of the dominant ions in the plasma are shown in (c) and (d) under the same conditions.

Image of FIG. 3.
FIG. 3.

Etch rate of (▲), (○), (◆), (◻), and (◼) films as a function of the square root of ion energy in a pure plasma at 3 mTorr and 500 W.

Image of FIG. 4.
FIG. 4.

XPS Cl , Al , and Hf spectra of films etched in a plasma at 3 mTorr, 500 W, and different substrate biases: −10, −60, and −120 V. The reference spectra are from the as-deposited film (top). The inset shows the atomic percentage of chlorine remaining on the etched film surface as a function of the square root of ion energy.

Image of FIG. 5.
FIG. 5.

XPS Cl , B , Al , and Hf spectra of films etched in a plasma at 3 mTorr, 500 W, and different substrate biases: −30, −70, and −110 V. The reference spectra are from the as-deposited film (bottom).

Tables

Generic image for table
TABLE I.

Selected bond strengths relevant to Cl-based etching of hafnium aluminate thin films (Ref. 29).

Generic image for table
TABLE II.

Heats of reactions for possible etching reactions of and in (Refs. 36 and 37).

Generic image for table
TABLE III.

Heats of reactions for possible etching reactions of and in (Refs. 36 and 37).

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/content/avs/journal/jvsta/27/2/10.1116/1.3065695
2009-02-06
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Plasma etching of Hf-based high-k thin films. Part II. Ion-enhanced surface reaction mechanisms
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/27/2/10.1116/1.3065695
10.1116/1.3065695
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