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Plasma etching of Hf-based high- thin films. Part III. Modeling the reaction mechanisms
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10.1116/1.3065705
/content/avs/journal/jvsta/27/2/10.1116/1.3065705
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/27/2/10.1116/1.3065705

Figures

Image of FIG. 1.
FIG. 1.

Schematic of ion-enhanced chemical etching in plasma.

Image of FIG. 2.
FIG. 2.

Model fit for the condition of no depositing species flux to experimental data for (△), (◇), and (◻) etching in plasma at 3 mTorr, 500 W as a function of ion energy.

Image of FIG. 3.
FIG. 3.

Model fit to experimental data for the etching and depositing regimes of (△), (◇), and (◻) etching in plasma at 3 mTorr, 500 W as a function of ion energy.

Tables

Generic image for table
TABLE I.

Summary of fitting results for plasma.

Generic image for table
TABLE II.

Summary of fitting results for plasma.

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/content/avs/journal/jvsta/27/2/10.1116/1.3065705
2009-02-06
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Plasma etching of Hf-based high-k thin films. Part III. Modeling the reaction mechanisms
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/27/2/10.1116/1.3065705
10.1116/1.3065705
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