1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Addition of yttrium into films: Microstructure and electrical properties
Rent:
Rent this article for
USD
10.1116/1.3106627
/content/avs/journal/jvsta/27/3/10.1116/1.3106627
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/27/3/10.1116/1.3106627

Figures

Image of FIG. 1.
FIG. 1.

Film composition (as measured by RBS) as a function of precursor solution composition for Hf–Y–O films grown at on (the thickness is in the range of ). The inset shows the density of the same films (determined from XRR) as a function of film composition.

Image of FIG. 2.
FIG. 2.

x-ray diffraction patterns for films grown at different temperatures with (a) Y and (b) Y. (c) x-ray diffraction patterns for films with 5.7 and and growing temperature of . All films have a thickness larger than , except for the film grown at , which has a thickness of .

Image of FIG. 3.
FIG. 3.

(a) Attenuated total-reflection-FTIR spectra of films grown at with different Y contents (the thickness ranges between 11.5 and ) and compared to a pure crystalline film grown at . (b) Electron diffraction patterns of a Y film grown at and of thickness (left) and Y film grown at and of thickness (right).

Image of FIG. 4.
FIG. 4.

SIMS profiles on a Hf–Y–O film grown at with Y and thickness of .

Image of FIG. 5.
FIG. 5.

Lattice parameter of Hf–Y–O cubic films as a function of Y content for thick films . For the two films with mixed monoclinic and higher-symmetry phases (2.5 and Y), the calculated value corresponds to the interplane spacing value calculated from the position of the peak located at . The peak at of Si was taken as a reference. The horizontal dashed line corresponds to the lattice parameter of referenced cubic (Ref. 51).

Image of FIG. 6.
FIG. 6.

ATR spectra for (a) as-deposited Hf–Y–O film grown at with Y and thickness of ; (b) same film after annealing at for under .

Image of FIG. 7.
FIG. 7.

XPS spectra of different Hf–Y–O films grown on : (a) Hf core level for Y; (b) Si core level for 8.5 and Y; (c) Y core level for 2.0 and Y. The growth temperature and films thickness are given in Table II.

Image of FIG. 8.
FIG. 8.

Transmission electron microscopy images of different films: Rey17 has Y, Rey91 has Y, Rey32 has Y, and Rey94 has Y. The growth temperature and film thickness are given in Table II, except for Rey91 (, ).

Image of FIG. 9.
FIG. 9.

curves for an as-deposited Hf–Y–O film grown on , with Y (Rey32). The film thickness is . The curves after annealing at for under are also shown.

Image of FIG. 10.
FIG. 10.

Total oxide charge density (absolute value) as a function of film thickness for as-deposited Hf–Y–O films grown on , with Y and for pure monoclinic films. The value for an annealed film (, , ) is also shown.

Image of FIG. 11.
FIG. 11.

Dielectric relative permittivity of the Hf–Y–O films grown on plotted as a function of Y content.

Image of FIG. 12.
FIG. 12.

Leakage current density as a function of applied voltage for Hf–Y–O films grown on with different Y contents and compared to a monoclinic film.

Tables

Generic image for table
TABLE I.

Values of the lattice parameter of the cubic phase for different amounts of yttrium (given as mol % or as at. % Y) in the solid solution (either films or bulk). Our data on films are presented together with data referenced in literature on ceramics or single crystals. The symbol ∼ denotes values extracted from graphs.

Generic image for table
TABLE II.

Position of the peaks of different core-level XPS spectra and full width at half maximum for films containing different amounts of Y. The positions are determined from the fitting of the experimental spectra.

Loading

Article metrics loading...

/content/avs/journal/jvsta/27/3/10.1116/1.3106627
2009-04-13
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Addition of yttrium into HfO2 films: Microstructure and electrical properties
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/27/3/10.1116/1.3106627
10.1116/1.3106627
SEARCH_EXPAND_ITEM