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Scanning Auger of a specific via interface in an integrated circuit using a novel focused ion beam sample preparation technique
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10.1116/1.3110003
/content/avs/journal/jvsta/27/4/10.1116/1.3110003
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/27/4/10.1116/1.3110003
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

TEM cross section of via1s at failing via 1 structure.

Image of FIG. 2.
FIG. 2.

(Color online) Schematic representation of the single-via analysis technique.

Image of FIG. 3.
FIG. 3.

TEM cross section of via 1 showing the cured via bottom.

Image of FIG. 4.
FIG. 4.

SEM image of the failing via 1 before Auger depth profile.

Image of FIG. 5.
FIG. 5.

(Color online) Auger depth profile of the failing via 1 after FIB sample preparation.

Image of FIG. 6.
FIG. 6.

SEM image of via 1 from good sample after FIB plan-view cut.

Image of FIG. 7.
FIG. 7.

(Color online) Auger depth profile of the good via 1 after novel FIB sample preparation.

Image of FIG. 8.
FIG. 8.

(Color online) EDS, cross sectional TEM, and top down SEM analyses of the trapped materials inside the via hole after etch and clean.

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/content/avs/journal/jvsta/27/4/10.1116/1.3110003
2009-06-29
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Scanning Auger of a specific via interface in an integrated circuit using a novel focused ion beam sample preparation technique
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/27/4/10.1116/1.3110003
10.1116/1.3110003
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