Effect of Ar and addition on based chemistry inductively coupled plasma etching of HgCdTe
Sketch of the ICP apparatus with the mass spectrometer (Langmuir probe is mount on the same flange than mass spectrometer).
High resolution (a), (b), and (c) XPS spectra before etching and after etching in based chemistry during 10, 30, and .
XPS surface composition of before etching and after etching of 10, 30, and . Lines are guide for eyes.
Positive ions mass spectra of plasma (a) with Ar addition (b) and (c) and with addition (d) and (e) in the range 0–45.
High resolution XPS quasi in situ spectra after etching in , , and plasma.
Neutral and ionic flux vs etching yield. Calculations are described in the text. Dash line is a guide for the eyes.
Electron density, electron temperature, total ion flux, ion flux, and density calculated from Langmuir probe and mass spectrometry measurements in various gas mixtures.
Etch rate, ratio between elements VI and II, and Cd surface stoichiometry, , in various gas mixtures.
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