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Effect of Ar and addition on based chemistry inductively coupled plasma etching of HgCdTe
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10.1116/1.3147219
/content/avs/journal/jvsta/27/4/10.1116/1.3147219
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/27/4/10.1116/1.3147219

Figures

Image of FIG. 1.
FIG. 1.

Sketch of the ICP apparatus with the mass spectrometer (Langmuir probe is mount on the same flange than mass spectrometer).

Image of FIG. 2.
FIG. 2.

High resolution (a), (b), and (c) XPS spectra before etching and after etching in based chemistry during 10, 30, and .

Image of FIG. 3.
FIG. 3.

XPS surface composition of before etching and after etching of 10, 30, and . Lines are guide for eyes.

Image of FIG. 4.
FIG. 4.

Positive ions mass spectra of plasma (a) with Ar addition (b) and (c) and with addition (d) and (e) in the range 0–45.

Image of FIG. 5.
FIG. 5.

High resolution XPS quasi in situ spectra after etching in , , and plasma.

Image of FIG. 6.
FIG. 6.

Neutral and ionic flux vs etching yield. Calculations are described in the text. Dash line is a guide for the eyes.

Tables

Generic image for table
TABLE I.

Electron density, electron temperature, total ion flux, ion flux, and density calculated from Langmuir probe and mass spectrometry measurements in various gas mixtures.

Generic image for table
TABLE II.

Etch rate, ratio between elements VI and II, and Cd surface stoichiometry, , in various gas mixtures.

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/content/avs/journal/jvsta/27/4/10.1116/1.3147219
2009-06-29
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of Ar and N2 addition on CH4–H2 based chemistry inductively coupled plasma etching of HgCdTe
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/27/4/10.1116/1.3147219
10.1116/1.3147219
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