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Low-temperature growth of InN on Si(100) by femtosecond pulsed laser deposition
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Image of FIG. 1.
FIG. 1.

(Color online) Schematic diagram of the LIB setup of combined with PLD for growth of InN film on the Si(100) substrate. The PLD of In target and the LIB of were carried out using the same amplified Ti:sapphire femtosecond laser. The gas was introduced into the UHV chamber at a pressure of . The focal spot size for LIB was . The gas breakdown was performed using a laser repetition rate of while ablation of In target was carried out at a repetition rate of .

Image of FIG. 2.
FIG. 2.

RHEED patterns of the grown InN film on Si(100) substrate at a temperature of . Initially, a buffer layer of In was grown on top of the Si(100) by fsPLD. Before depositing the final film, an intermediate InN layer was grown at a substrate temperature of by the fsPLD and LIB in . The RHEED patternss taken at [011], [001], , and [031] azimuths of the Si(100) surface are shown in (a), (b), (c), and (d), respectively.

Image of FIG. 3.
FIG. 3.

(a) RHEED pattern along the azimuth of the Si(100) surface. (b) RHEED intensity profiles of the first-order peaks of the In and InN. The bright diffraction beams correspond to the 2D In initial layer and the faint beams correspond to the InN.

Image of FIG. 4.
FIG. 4.

(Color online) (a) AFM image of 3D islands of InN film grown on Si(100). (b) XRD profile of an InN film grown on Si(100) substrate. The two peaks from and are at of and , respectively. The peak (400) is reflection from the Si substrate. The inset shows RHEED patterns taken at [001] and azimuths of the Si(100) surface indicating streaky and transmission spot diffraction features. The InN film was grown on Si(100) at by the fsPLD.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-temperature growth of InN on Si(100) by femtosecond pulsed laser deposition