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Etching characteristics and mechanism of indium tin oxide films in an inductively coupled plasma
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10.1116/1.3256226
/content/avs/journal/jvsta/28/1/10.1116/1.3256226
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/1/10.1116/1.3256226

Figures

Image of FIG. 1.
FIG. 1.

ITO and PR etch rates as well as negative dc bias as functions of the mixing ratio. The lines are to guide the eyes only.

Image of FIG. 2.
FIG. 2.

Model-predicted densities of neutral species in pure HBr plasma (a) and the relative densities (mole fractions) of neutral species as functions of mixing ratio (b).

Image of FIG. 3.
FIG. 3.

Fluxes of neutral species (, , and ) and the energy flux of positive ions as functions of the mixing ratio.

Tables

Generic image for table
TABLE I.

Experimental (ex) and model-predicted (m) electron temperature (in units of eV) and densities (in units of ) of charged species in plasma.

Generic image for table
TABLE II.

Ratios between the intensities in the plasma QMS spectrum.

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/content/avs/journal/jvsta/28/1/10.1116/1.3256226
2009-11-13
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Etching characteristics and mechanism of indium tin oxide films in an inductively coupled HBr∕Ar plasma
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/1/10.1116/1.3256226
10.1116/1.3256226
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