Etching characteristics and mechanism of indium tin oxide films in an inductively coupled plasma
ITO and PR etch rates as well as negative dc bias as functions of the mixing ratio. The lines are to guide the eyes only.
Model-predicted densities of neutral species in pure HBr plasma (a) and the relative densities (mole fractions) of neutral species as functions of mixing ratio (b).
Fluxes of neutral species (, , and ) and the energy flux of positive ions as functions of the mixing ratio.
Experimental (ex) and model-predicted (m) electron temperature (in units of eV) and densities (in units of ) of charged species in plasma.
Ratios between the intensities in the plasma QMS spectrum.
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