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Effects of Al doping and annealing on chemical states and band diagram of gate stacks studied by photoemission and x-ray absorption spectroscopy
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10.1116/1.3259869
/content/avs/journal/jvsta/28/1/10.1116/1.3259869
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/1/10.1116/1.3259869
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Annealing temperature dependence of (a) O and (b) Si photoemission spectra of film fabricated on the Si substrate. Curve-fitting results are also shown.

Image of FIG. 2.
FIG. 2.

Annealing temperature dependence of Si bulk and oxide intensity ratios of film for , 0.33, 0.50, and 0.67. The inset shows the schematic view of the formation of the interlayer due to the diffusion of Si by annealing.

Image of FIG. 3.
FIG. 3.

Al concentration dependence of (a) O and (b) Y photoemission spectra of film. Curve-fitting results are also shown.

Image of FIG. 4.
FIG. 4.

Al concentration dependence of (a) valence-band and (b)x-ray absorption spectra of film.

Image of FIG. 5.
FIG. 5.

Al concentration dependence of (a) valence-band offset and (b) band gap by annealing sample at 400, 600, and . The dashed lines indicate (a) linear and (b) parabolic fitting results.

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/content/avs/journal/jvsta/28/1/10.1116/1.3259869
2009-11-13
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of Al doping and annealing on chemical states and band diagram of Y2O3∕Si gate stacks studied by photoemission and x-ray absorption spectroscopy
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/1/10.1116/1.3259869
10.1116/1.3259869
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