Effects of Al doping and annealing on chemical states and band diagram of gate stacks studied by photoemission and x-ray absorption spectroscopy
Annealing temperature dependence of (a) O and (b) Si photoemission spectra of film fabricated on the Si substrate. Curve-fitting results are also shown.
Annealing temperature dependence of Si bulk and oxide intensity ratios of film for , 0.33, 0.50, and 0.67. The inset shows the schematic view of the formation of the interlayer due to the diffusion of Si by annealing.
Al concentration dependence of (a) O and (b) Y photoemission spectra of film. Curve-fitting results are also shown.
Al concentration dependence of (a) valence-band and (b)x-ray absorption spectra of film.
Al concentration dependence of (a) valence-band offset and (b) band gap by annealing sample at 400, 600, and . The dashed lines indicate (a) linear and (b) parabolic fitting results.
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