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Etch mechanism of and thin films in HBr-based inductively coupled plasmas
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10.1116/1.3294712
/content/avs/journal/jvsta/28/2/10.1116/1.3294712
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/2/10.1116/1.3294712
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

and etch rates as well as the negative dc bias voltage as functions of HBr/Ar mixing ratio (a), input power (b), and pressure (c). The conditions are , , , and (a); 25% Ar, , , and (b); 25% Ar, , , and (c). The lines are to guide the eye only.

Image of FIG. 2.
FIG. 2.

Measured electron temperature and total positive ion density (symbols) as well as model-predicted electron and negative ion densities (dashed lines) as functions of HBr/Ar mixing ratio (a), input power (b), and pressure (c). The conditions are , , , and (a); 25% Ar, , , and (b); 25% Ar, , , and (c). The solid lines are to guide the eye only.

Image of FIG. 3.
FIG. 3.

Model-predicted densities of neutral species as functions of HBr/Ar mixing ratio (a), input power (b), and pressure (c). The conditions are , , , and (a); 25% Ar, , , and (b); 25% Ar, , , and (c).

Image of FIG. 4.
FIG. 4.

Model-predicted fluxes of neutral species (dashed lines) and the parameter characterizing the ion energy flux (solid ) as functions of HBr/Ar mixing ratio (a), input power (b), and pressure (c). The conditions are , , , and (a); 25% Ar, , , and (b); 25% Ar, , , and (c).

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/content/avs/journal/jvsta/28/2/10.1116/1.3294712
2010-01-21
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Etch mechanism of In2O3 and SnO2 thin films in HBr-based inductively coupled plasmas
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/2/10.1116/1.3294712
10.1116/1.3294712
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