Vapor pressures of trimethylaluminum (TMA), dimethylaluminum isopropoxide (DMAI), aluminum tri-isopropoxide (ATI).
XPS survey spectrum collected from film deposited at .
XPS depth profile of film deposited at .
C/Al ratio in deposited films, as calculated by XPS. Films were sputter cleaned prior to analysis. Approximately 4 Å of film thickness was removed by the cleaning process.
High-resolution XPS spectra collected from the region of films deposited at 417 and .
Experimental (symbols) and modeled (lines) psi and delta values collected from a nominally 625 Å thick film deposited at .
Index of refraction (632.8 nm) of deposited films, determined by spectroscopic ellipsometry.
Film deposition rate as determined by ellipsometry.
Apparent activation energies observed in CVD aluminum oxide processes.
Comparison of fluxes from background gases and film deposition (all flux values in units of molecules ).
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