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Etching studies of silica glasses in inductively coupled plasmas: Implications for microfluidic devices fabrication
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10.1116/1.3298875
/content/avs/journal/jvsta/28/2/10.1116/1.3298875
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/2/10.1116/1.3298875

Figures

Image of FIG. 1.
FIG. 1.

Surface composition as a function of the etching time for Vycor (a), Pyrex (b), D263 (c), and AF45 (d) (, 1500 W, 10 mTorr, −200 V, and 40 SCCM).

Image of FIG. 2.
FIG. 2.

Evolution of the XPS spectra of Na (a) and Al (b) from Pyrex surfaces as a function of the etching time (, 1500 W, 10 mTorr, −200 V, and 40 SCCM).

Image of FIG. 3.
FIG. 3.

Etch depth (a) and surface roughness (b) as a function of the etching time (, 1500 W, 10 mTorr, −200 V, and 40 SCCM).

Image of FIG. 4.
FIG. 4.

Surface morphology measured by AFM for Pyrex (a), D263 [(b) and (c)], and AF45 (d) after 10 min of etching (, 1500 W, 10 mTorr, −200 V, and 40 SCCM).

Image of FIG. 5.
FIG. 5.

Etch rate (a) and surface roughness (b) at 5 min as a function of the dc self-bias (, 1500 W, 10 mTorr, and 40 SCCM).

Image of FIG. 6.
FIG. 6.

Etch rate at 5 min as a function of the bias power for two different source power values, 800 and 1500W (, 10 mTorr, and 40 SCCM).

Image of FIG. 7.
FIG. 7.

Etch rate (a) and roughness (b) at 5 min as a function of the pressure (, 1500 W, −200 V, and 40 SCCM).

Image of FIG. 8.
FIG. 8.

Etch rate at 5 min (a), ion current, and fluorine atom density (b) as a function of the fractional argon flow rate for plasmas (1500 W, −200 V, 10 mTorr, and 40 SCCM).

Image of FIG. 9.
FIG. 9.

Etch rate divided by the ion flux as a function of the ratio for various plasma conditions. Data were fitted according to Eq. (3) (dotted lines); and were left as floating parameters whereas the values were calculated from the materials densities and chemical compositions: 4.48, 3.94, and for Vycor, Pyrex, and D263, respectively. Additionally, the fitting procedure included all the data for Vycor and Pyrex, but was restricted to the first four points for D263.

Image of FIG. 10.
FIG. 10.

Surface roughness as a function of the etched rate for Pyrex, using various fractional argon flow rate and pressure for plasmas (1500 W, −200 V, and 40 SCCM—measurements performed at 5 min). The optimum conditions are circled.

Image of FIG. 11.
FIG. 11.

Surface roughness as a function of the etched rate for D263, using various fractional argon flow rate and pressure for plasmas (1500 W, −200 V, and 40 and 40 SCCM—measurements performed at 5 min). The optimum conditions are circled.

Image of FIG. 12.
FIG. 12.

Surface roughness as a function of the etched rate for AF45, using various fractional argon flow rate and pressure for plasmas (1500 W, −200 V, and 40 SCCM—measurements performed at 5 min). The optimum conditions are circled.

Image of FIG. 13.
FIG. 13.

Pattern transfer in Pyrex using a pure plasma at 10 mTorr (a) or a (1:1) plasma at 5 mTorr (1500 W, −150 V, and 40 SCCM—total etching time 9 min).

Image of FIG. 14.
FIG. 14.

Pattern transfer in D263 using a pure plasma at 5 mTorr (a) or a (3:7) plasma at 5 mTorr (1500 W, −150 V, and 40 SCCM—total etching time 9 min).

Image of FIG. 15.
FIG. 15.

Pattern transfer in AF45 using a pure plasma at 5 mTorr (a) or a (1:1) plasma at 5 mTorr (1500 W, −150 V, and 40 SCCM—total etching time 9 min).

Tables

Generic image for table
TABLE I.

Glass molar compositions as provided by the suppliers.

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/content/avs/journal/jvsta/28/2/10.1116/1.3298875
2010-02-02
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Etching studies of silica glasses in SF6/Ar inductively coupled plasmas: Implications for microfluidic devices fabrication
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/2/10.1116/1.3298875
10.1116/1.3298875
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