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Combinatorial characterization of transparent conductive properties of Ga-doped ZnO films cosputtered from electron cyclotron resonance and rf magnetron plasma sources
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10.1116/1.3328053
/content/avs/journal/jvsta/28/2/10.1116/1.3328053
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/2/10.1116/1.3328053
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Geometric configuration of deposition apparatus equipped with ECR and rf magnetron sputtering sources.

Image of FIG. 2.
FIG. 2.

Thickness distribution of (a) ZnO, (b) , and (c) GZO films through individually operating (a) ECR and (b) rf magnetron sources, and (c) simultaneously operating them, and (d) content distribution estimated from ZnO and thickness. The thickness has been normalized for 1 h deposition and is given in nanometers.

Image of FIG. 3.
FIG. 3.

Ga concentration profile at center line of wafer surface measured by XRF and ICP-AES (solid circles) and estimated from thickness distributions in Figs. 2(a) and 2(b) (open circles).

Image of FIG. 4.
FIG. 4.

(a) -scan XRD patterns and (b) -scan rocking curves of the (002) diffraction peak at from 330-nm-thick ZnO and GZO films grown on silica glass substrate under same conditions.

Image of FIG. 5.
FIG. 5.

-content dependence of (a) resistivity taken from multiple samples deposited at various magnetron powers, (b) carrier concentration (open circles), Hall mobility (closed circles), and resistivity (open squares), and (c) ZnO (002) peak intensity measured with 18 mm square silica glass substrate.

Image of FIG. 6.
FIG. 6.

(a) -scan and (b) -scan XRD patterns of GZO films on silica glass substrate with high content.

Image of FIG. 7.
FIG. 7.

Changes in optical transmittance spectra when content is varied.

Image of FIG. 8.
FIG. 8.

-content dependence of resistivity for GZO films deposited at (open squares), (closed circles), and (open circles) as well as that deposited under flow of 0.5 SCCM at (closed squares).

Image of FIG. 9.
FIG. 9.

Temperature dependence of carrier concentration , Hall mobility , and resistivity of GZO film with content of 4 wt %.

Image of FIG. 10.
FIG. 10.

-scan rocking curves of the (002) diffraction peak at from 330-nm-thick ZnO and GZO films grown at various temperatures.

Image of FIG. 11.
FIG. 11.

Magnet-current dependence of carrier concentration (open circles), Hall mobility (closed circles), and resistivity (open squares) of GZO film.

Image of FIG. 12.
FIG. 12.

(a) Model of Ga position in ZnO unit crystal and [(b)–(d)] arrangement of hexagonal units. Units with and without Ga at center are denoted by closed and gray circles.

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/content/avs/journal/jvsta/28/2/10.1116/1.3328053
2010-02-24
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Combinatorial characterization of transparent conductive properties of Ga-doped ZnO films cosputtered from electron cyclotron resonance and rf magnetron plasma sources
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/2/10.1116/1.3328053
10.1116/1.3328053
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