Schottky metal-GaN interface KOH pretreatment for improved device performance
Current-voltage curves for two KOH etched and two non-KOH etched devices.
Bias dependence of the ideality factor for the two KOH etched and two non-KOH etched devices of Fig. 1.
XPS depth profile of Schottky/GaN interface (a) without and (b) with KOH etch as a process step.
Ga photoemission spectra taken at the surface point during the depth profile of Fig. 3.
Photoemission spectra for the surface of GaN (a) before and after KOH etching for (b) 60 s and (c) 90 s.
(Color online) (a) Model indicating the antisite defect in the center, and (b) Antisite defect passivated by H atoms (white).
(Color online) (a) Antisite defect (b) its appearance as passivated by OH radicals.
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