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Schottky metal-GaN interface KOH pretreatment for improved device performance
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10.1116/1.3299253
/content/avs/journal/jvsta/28/4/10.1116/1.3299253
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/4/10.1116/1.3299253
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Current-voltage curves for two KOH etched and two non-KOH etched devices.

Image of FIG. 2.
FIG. 2.

Bias dependence of the ideality factor for the two KOH etched and two non-KOH etched devices of Fig. 1.

Image of FIG. 3.
FIG. 3.

XPS depth profile of Schottky/GaN interface (a) without and (b) with KOH etch as a process step.

Image of FIG. 4.
FIG. 4.

Ga photoemission spectra taken at the surface point during the depth profile of Fig. 3.

Image of FIG. 5.
FIG. 5.

Photoemission spectra for the surface of GaN (a) before and after KOH etching for (b) 60 s and (c) 90 s.

Image of FIG. 6.
FIG. 6.

(Color online) (a) Model indicating the antisite defect in the center, and (b) Antisite defect passivated by H atoms (white).

Image of FIG. 7.
FIG. 7.

(Color online) (a) Antisite defect (b) its appearance as passivated by OH radicals.

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/content/avs/journal/jvsta/28/4/10.1116/1.3299253
2010-06-29
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Schottky metal-GaN interface KOH pretreatment for improved device performance
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/4/10.1116/1.3299253
10.1116/1.3299253
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