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Nanopatterning of ultrananocrystalline diamond thin films via block copolymer lithography
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10.1116/1.3299260
/content/avs/journal/jvsta/28/4/10.1116/1.3299260
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/4/10.1116/1.3299260
View: Figures

Figures

Image of Scheme 1.
Scheme 1.

chemical structure.

Image of FIG. 1.
FIG. 1.

(Color online) Schematic of implementation of cylinder-forming block copolymer films as lithographic etch masks. The top line displays an array of nanowires created using in-plane cylinders while the bottom line displays a dot array created using standing cylinders.

Image of FIG. 2.
FIG. 2.

Tapping mode AFM images of (a) bare as grown UNCD surface and (b) sparsely distributed PFS cylinders on as grown UNCD. Film forming conditions: 1% spin cast from toluene at a spin speed of 4000 rpm for 1 min and annealed at for 72 h. Oxygen RIE (7 SCCM , 100 W, 20 mTorr, and 3 min) was used to remove the PS matrix prior to imaging.

Image of FIG. 3.
FIG. 3.

Tapping mode AFM images of (a) NU-UNCD surface and (b) densely distributed PFS cylinders on NU-UNCD. Film forming conditions: 1% spin cast from toluene at a spin speed of 4000 rpm for 1 min. Oxygen RIE (7 SCCM , 100 W, 20 mTorr, and 3 min) was used to remove the PS matrix prior to imaging.

Image of FIG. 4.
FIG. 4.

Tapping mode AFM image of PFS cylinders oriented in plane on the NU-UNCD surface. 1% was spin cast from toluene at a spin speed of 4000 rpm for 1 min and then solvent annealed for 90 min. Oxygen RIE (7 SCCM , 100 W, 20 mTorr, and 3 min) was used to remove the PS matrix prior to imaging.

Image of FIG. 5.
FIG. 5.

Etch rate of NU-UNCD at a fixed etching condition of 80 SCCM , 250 W, and 335 mTorr. 25 nm was used as an etch mask.

Image of FIG. 6.
FIG. 6.

(Color online) (a) Tapping mode AFM images of lithographically created NU-UNCD nanopillars and (b) NU-UNCD horizontal nanowires. (c) SEM image taken with a 45° tilt angle of a sample with nanopillars. Oxygen plasma RIE (80 SCCM , 250 W, and 335 mTorr) was used to transfer the pattern. The leftover polymer mask was removed via piranha cleaning prior to imaging. Scale bars represent 200 nm.

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/content/avs/journal/jvsta/28/4/10.1116/1.3299260
2010-06-29
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanopatterning of ultrananocrystalline diamond thin films via block copolymer lithography
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/4/10.1116/1.3299260
10.1116/1.3299260
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