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High rate reactive magnetron sputter deposition of Al-doped ZnO with unipolar pulsing and impedance control system
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10.1116/1.3308621
/content/avs/journal/jvsta/28/4/10.1116/1.3308621
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/4/10.1116/1.3308621
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic of the reactive magnetron sputtering with the unipolar unit and a plasma control unit.

Image of FIG. 2.
FIG. 2.

Variation of cathode voltage as a function of flow ratio; sputtering powers at (a) 2 kW and (b) 4 kW. The depositions were carried out using a simple flow control method from the metal mode (▽) or from the oxide mode (△), respectively. (▲) represents the case of deposition using the feedback system with impedance control.

Image of FIG. 3.
FIG. 3.

Dependence of deposition rate on cathode voltage; sputtering powers at (a) 2 kW and (b) 4 kW.

Image of FIG. 4.
FIG. 4.

weight ratios of AZO films deposited with sputtering powers of (a) 2 and (b) 4 kW in the transition region as a function of the cathode voltage.

Image of FIG. 5.
FIG. 5.

XRD patterns of AZO films deposited on glass substrates; (a) unheated, 2 kW, (b) heated at , 2 kW, (c) unheated 4kW, and (d) heated at , 4 kW. The intensities of some peaks were multiplied by indicated factors (for example, 1/5 or 1/20) to avoid overlap. (e) XRD peak of ZnO (002) for AZO films deposited at 2 kW for a cathode voltage at 405 V (solid line) and for films deposited at 4 kW for the cathode voltage at 375 V (dashed line).

Image of FIG. 6.
FIG. 6.

Carrier density, Hall mobility, and resistivity of AZO films deposited with sputtering powers of (a) 2 and (b) 4 kW as a function of cathode voltage.

Image of FIG. 7.
FIG. 7.

Electrical properties measured at various temperatures in the range from 100 to 300 K for AZO films deposited with sputtering powers of 2 and 4 kW. The set values of the cathode voltages were (a) 383 and 405 V, or (b) 365 and 375 V for the unheated and 200 C depositions, respectively.

Image of FIG. 8.
FIG. 8.

Transmittance and reflectance of AZO films deposited on unheated glass and glass heated at with sputtering powers of (a) 2 and (b) 4 kW. The set values of the cathode voltages were (a) 383 and 405 V, or (b) 365 and 375 V for the unheated and 200 C depositions, respectively.

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/content/avs/journal/jvsta/28/4/10.1116/1.3308621
2010-06-29
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High rate reactive magnetron sputter deposition of Al-doped ZnO with unipolar pulsing and impedance control system
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/4/10.1116/1.3308621
10.1116/1.3308621
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