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Fabrication and characterization of ink jet processed organic thin film transistors with poly-4-vinylphenol gate dielectric
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10.1116/1.3358162
    + View Affiliations - Hide Affiliations
    Affiliations:
    1 School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea
    2 Sungkyunkwan University Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Republic of Korea
    3 School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea
    4 School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea and Sungkyunkwan University Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Republic of Korea
    a) Author to whom correspondence should be addressed; electronic mail: ichung@skku.ac.kr
    J. Vac. Sci. Technol. A 28, 873 (2010); http://dx.doi.org/10.1116/1.3358162
/content/avs/journal/jvsta/28/4/10.1116/1.3358162
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/4/10.1116/1.3358162
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Metal-insulator-metal (MIM) capacitor process flow based on (a) spin coating and (b) ink jet printing.

Image of FIG. 2.
FIG. 2.

(Color online) OTFT structure and process flow fabricated using ink jet printing.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Breakdown voltage with respect to spin coated PVP thickness in terms of PVP concentration (7, 8, and ). (b) Leakage current density with respect to spin coated PVP thickness in terms of PVP concentration (7, 8, and ). (c) Dielectric constant with respect to spin coated PVP thickness in terms of PVP concentration (7, 8, and ). The values obtained from the 80 nm PVP which was printed using the ink jet are shown in the figures together.

Image of FIG. 4.
FIG. 4.

(Color online) Optical microscopy image and SPM topologies obtained from TIPS pentacene thin film printed on PVP . (a) Optical microscopy image. (b) SPM topology with scan area. (c) SPM topology with scan area. (d) SPM topology with scan area.

Image of FIG. 5.
FIG. 5.

XRD peaks obtained from TIPS pentacene printed on the PVP dielectric layer.

Image of FIG. 6.
FIG. 6.

(Color online) (a) characteristics of TIPS pentacene OTFT with PVP as a gate dielectric fabricated using ink jet printing. (b) Transfer characteristics of the TIPS pentacene TFT with PVP as a gate dielectric fabricated using ink jet printing.

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/content/avs/journal/jvsta/28/4/10.1116/1.3358162
2010-06-29
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication and characterization of ink jet processed organic thin film transistors with poly-4-vinylphenol gate dielectric
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/4/10.1116/1.3358162
10.1116/1.3358162
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