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Infinitely high selective inductively coupled plasma etching of an indium tin oxide binary mask structure for extreme ultraviolet lithography
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10.1116/1.3425639
/content/avs/journal/jvsta/28/4/10.1116/1.3425639
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/4/10.1116/1.3425639
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic diagram of the ITO binary mask structure for EUVL used in this study.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Etch rates of ITO (absorber layer) and Ru (capping/etch-stop layer) with varied gas flow ratios at fixed conditions: top electrode power of 500 W, dc self-bias voltage of −50 V, process pressure of 15 mTorr, and etch time of 60 s.

Image of FIG. 3.
FIG. 3.

(Color online) Etch rates and selectivities of ITO (absorber layer) and Ru (capping/etch-stop layer) with varied top electrode powers at fixed conditions: gas flow ratio, , dc self-bias voltage of −50 V, process pressure of 15 mTorr, and etch time of 60 s.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Etch rates of ITO (absorber layer) and Ru (capping/etch-stop layer) with varied dc self-bias voltages at fixed conditions of gas flow ratio, , top electrode power of 500 W, process pressure of 15 mTorr, and etch time of 60 s. (b) Cross-sectional FE-SEM images of the etched ITO (45 nm)/Ru (2 nm) layer to confirm the infinitely high selectivity of the ITO to the Ru layer.

Image of FIG. 5.
FIG. 5.

(Color online) (a) Etch depths of the ITO/Ru/Mo–Si multilayer stack structure with a PR obtained at different etch times. (b) Cross-sectional FE-SEM image of etch depth of the ITO/Ru/Mo–Si multilayer stack structure at fixed conditions as gas flow ratio, , top electrode power of 500 W, dc self-bias voltage of −50 V, process pressure of 15 mTorr, and etch time of 90 s.

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/content/avs/journal/jvsta/28/4/10.1116/1.3425639
2010-06-29
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Infinitely high selective inductively coupled plasma etching of an indium tin oxide binary mask structure for extreme ultraviolet lithography
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/4/10.1116/1.3425639
10.1116/1.3425639
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