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Thickness inhomogeneities and growth mechanisms of GaP heteroepitaxy by organometallic chemical vapor deposition
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10.1116/1.3442805
/content/avs/journal/jvsta/28/4/10.1116/1.3442805
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/4/10.1116/1.3442805

Figures

Image of FIG. 1.
FIG. 1.

(Color online) AFM micrographs of (a) with 7 min etching and (b) nrSi(CP-4) with 30 s etching. The rms roughnesses are 12 and 5.3 nm, respectively.

Image of FIG. 2.
FIG. 2.

(Color online) [(a)–(g)] Images of portions of the samples obtained in depositions A–G, respectively, with substrates indicated. Images (a), (b), and (g) were taken with a digital camera, and (c)–(f) with a scanner.

Image of FIG. 3.
FIG. 3.

(Color online) [(a)–(e)] Nominal (in blue) and effective (in red) lateral thicknesses profiles together with best-fit curves for depositions A (a), B (b), C (c), D (d), and G (e).

Image of FIG. 4.
FIG. 4.

Evolution of at the energy 4.84 eV of the peak of of GaP for deposition G. The growth temperature is .

Image of FIG. 5.
FIG. 5.

(Color online) AFM micrograph of the center of the GaP film grown on nrSi(CP-4) for deposition G.

Image of FIG. 6.
FIG. 6.

(Color online) Lateral thickness variations predicted by Eqs. (8a) and (8b) with and .

Tables

Generic image for table
TABLE I.

Growth conditions for the depositions discussed here.

Generic image for table
TABLE II.

Parameters describing the depositions of Table I.

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/content/avs/journal/jvsta/28/4/10.1116/1.3442805
2010-06-17
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thickness inhomogeneities and growth mechanisms of GaP heteroepitaxy by organometallic chemical vapor deposition
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/4/10.1116/1.3442805
10.1116/1.3442805
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