Thickness inhomogeneities and growth mechanisms of GaP heteroepitaxy by organometallic chemical vapor deposition
(Color online) AFM micrographs of (a) with 7 min etching and (b) nrSi(CP-4) with 30 s etching. The rms roughnesses are 12 and 5.3 nm, respectively.
(Color online) [(a)–(g)] Images of portions of the samples obtained in depositions A–G, respectively, with substrates indicated. Images (a), (b), and (g) were taken with a digital camera, and (c)–(f) with a scanner.
(Color online) [(a)–(e)] Nominal (in blue) and effective (in red) lateral thicknesses profiles together with best-fit curves for depositions A (a), B (b), C (c), D (d), and G (e).
Evolution of at the energy 4.84 eV of the peak of of GaP for deposition G. The growth temperature is .
(Color online) AFM micrograph of the center of the GaP film grown on nrSi(CP-4) for deposition G.
(Color online) Lateral thickness variations predicted by Eqs. (8a) and (8b) with and .
Growth conditions for the depositions discussed here.
Parameters describing the depositions of Table I.
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