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Epitaxial growth and chemical lift-off of GaInN/GaN heterostructures on - and -sapphire substrates employing ZnO sacrificial templates
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10.1116/1.3443220
/content/avs/journal/jvsta/28/4/10.1116/1.3443220
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/4/10.1116/1.3443220

Figures

Image of FIG. 1.
FIG. 1.

(Color online) XRD spectra measured from samples A and B, as well as their ZnO/sapphire substrates. (a) Sample A, off-axis scans from sample A aiming at , ZnO , and GaInN , respectively. (b) Sample B, off-axis scans from sample B aiming at (0006), ZnO , and GaN , respectively. The symmetries and the alignments in and provide clear evidence that the ZnO templates were epitaxially grown on - and -sapphire substrates and the GaInN/GaN heterostructures were epitaxially grown on the ZnO templates.

Image of FIG. 2.
FIG. 2.

(Color online) Processing procedures for lifting-off GaInN/GaN structures from sapphire substrate, demonstrating a successful, crack-free lift-off.

Image of FIG. 3.
FIG. 3.

(Color online) Morphologies recorded by Nomarski microscope from samples A and B before and after lift-off. (a) Sample A before lift-off. Sample A after lift-off. (b) Sample B before lift-off. Sample B after lift-off. The cracking lines are along the -direction of GaInN/GaN. The inset of shows the morphology of sample B after lift-off with a larger magnification.

Image of FIG. 4.
FIG. 4.

(Color online) [(a) and (b)] Comparisons of XRD spectra measured, before and after lift-off, from samples A and B, respectively. [ and ] Comparisons of Raman-scattering spectra collected at room temperature, before and after lift-off, from samples A and B, respectively. The insets in and are the enlarged spectra of the first-order longitudinal optical modes observed in and , respectively. Redshift of in sample B is clearly observed after lift-off.

Image of FIG. 5.
FIG. 5.

(Color online) High-resolution triple-axis XRD spectra measured from sample B before lift-off aiming at (a) , (b) , and (c) atomic planes. The bold curves are the Gaussian function fittings that illustrate the peak positions, as shown beside the peaks.

Tables

Generic image for table
TABLE I.

Lattice parameters of the GaN and ZnO layers extracted from the in-axis and off-axis and high-resolution XRD measurements using triaxis and skew configurations.

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/content/avs/journal/jvsta/28/4/10.1116/1.3443220
2010-06-17
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth and chemical lift-off of GaInN/GaN heterostructures on c- and r-sapphire substrates employing ZnO sacrificial templates
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/4/10.1116/1.3443220
10.1116/1.3443220
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