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Low-energy ion bombardment to tailor the interfacial and mechanical properties of polycrystalline -silicon carbide
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10.1116/1.3480341
/content/avs/journal/jvsta/28/5/10.1116/1.3480341
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/5/10.1116/1.3480341
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Poly-SiC film average stress vs ion bombardment time for a given ion energy. The films, 300 nm in thickness, are deposited directly on Si(100) wafers.

Image of FIG. 2.
FIG. 2.

Poly-SiC strain gradient vs ion bombardment time for ion energy of 330 eV. The films, 300 nm in thickness, are deposited directly on Si(100) wafers.

Image of FIG. 3.
FIG. 3.

(Color online) Surface morphology of as-deposited film (a) and after 540 eV bombardment for 120 s (b). The -scale is 100 nm, the surface root-mean-square roughnesses of the as-deposited and bombarded film are 6.7 and 5.3 nm, respectively.

Image of FIG. 4.
FIG. 4.

(Color online) Schematic diagram of the poly-SiC corrosion test electrodes (a) and images of the electrodes after 20 h exposure to 80% RH. [(b)–(e)] electrode at ; electrode, electrically grounded. (b), (c) as-fabricated electrodes; [(d) and (e)] 540 eV ion bombarded for 120 s.

Image of FIG. 5.
FIG. 5.

Poly-SiC film contact angle vs 540 eV ion bombardment time.

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/content/avs/journal/jvsta/28/5/10.1116/1.3480341
2010-09-03
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-energy ion bombardment to tailor the interfacial and mechanical properties of polycrystalline 3C-silicon carbide
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/5/10.1116/1.3480341
10.1116/1.3480341
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