(Color online) Poly-SiC film average stress vs ion bombardment time for a given ion energy. The films, 300 nm in thickness, are deposited directly on Si(100) wafers.
Poly-SiC strain gradient vs ion bombardment time for ion energy of 330 eV. The films, 300 nm in thickness, are deposited directly on Si(100) wafers.
(Color online) Surface morphology of as-deposited film (a) and after 540 eV bombardment for 120 s (b). The -scale is 100 nm, the surface root-mean-square roughnesses of the as-deposited and bombarded film are 6.7 and 5.3 nm, respectively.
(Color online) Schematic diagram of the poly-SiC corrosion test electrodes (a) and images of the electrodes after 20 h exposure to 80% RH. [(b)–(e)] electrode at ; electrode, electrically grounded. (b), (c) as-fabricated electrodes; [(d) and (e)] 540 eV ion bombarded for 120 s.
Poly-SiC film contact angle vs 540 eV ion bombardment time.
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