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Control of bombardment energy and energetic species toward a superdense titanium nitride film
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10.1116/1.3490018
/content/avs/journal/jvsta/28/6/10.1116/1.3490018
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/6/10.1116/1.3490018
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Figures

Image of FIG. 1.
FIG. 1.

(a) Hysteresis curve with dc 15 kW, Ar flow 100 SCCM. (b) The resputter factor (Ti fluorescence from zero bias process over with bias process). (c) Film density changes over the wafer bias power, for the process Ar flows of 5, 33, 65, and 100 SCCM. (d) The film resistivity changes with wafer bias power. The sheet resistance is measured from four-point-probe and the thickness is measured by XRR.

Image of FIG. 2.
FIG. 2.

(a) Wafer bias voltage with an applied wafer rf bias power. Above an Ar flow of 65 SCCM, the bias voltage (and thus ion current density) is saturated. (b) The ratio of wafer level plasma sheath to ion mean free path. The plasma sheath for 13.56 MHz is estimated from Child–Langmuir law. The mean free path is calculated based on the chamber pressure. (c) is used to characterize the ion transit time. is 13.56 MHz and is the ion transit time through the plasma sheath.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Glancing angle scan with set to 0.5° (the incident beam angle to the sample surface). The Ar flow is 5 SCCM and the bias goes from 0 to 600 W. (b) Glancing angle scan with an Ar flow of 65 SCCM. At a high bias of 600 W, the fcc (200) to fcc (111) ratio drops back down to 1/3. (c) Glancing angle scan with an Ar flow of 100 SCCM. Under zero bias power, the fcc (111) peak completely dominates. The fcc (200) to fcc (111) ratio increases with the bias power and peaks at 400 W rf bias. (d) TEM cross section for TiN film grown under 0 W bias, Ar flow of 5 SCCM, and nitrogen flow of 120 SCCM. (e) TEM cross section for TiN film grown at room temperature with 0 W bias, Ar flow of 100 SCCM, and nitrogen flow of 130 SCCM. (f) Same condition as (e) except with 400 W bias.

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/content/avs/journal/jvsta/28/6/10.1116/1.3490018
2010-09-24
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Control of bombardment energy and energetic species toward a superdense titanium nitride film
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/28/6/10.1116/1.3490018
10.1116/1.3490018
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