Si and etch rates and etch selectivity as a function of (a) flow rate with 10 SCCM and and 100 W and (b) applied rf power for .
SEM images of Si wafers (top row) and wafers (bottom row) etched 5 min with and . The substrates in (a) and (c) were masked with 400 mesh Cu grid, and those in (b) and (d) were masked with 2000 mesh Cu grid. Scale bar in each image is .
SEM images of exposed surfaces of (a) Si and (b) substrates after etching in plasma with and . Scale bar in each image is 100 nm.
Atomic surface composition of Si, F, O, and Al as measured by ex situ XPS for (a) Si and (b) substrates as a function of addition at 10 SCCM and .
Normalized OES intensities of (circles) and (triangles) in (a) as a function of addition at 10 SCCM and and 100 W and (b) as a function of with .
Mass spectra of neutral species in (a) for 10 SCCM at with no addition and in (b) for 10 SCCM SCCM at (inverted for clarity). For peaks that extend beyond the figure boundaries, maximum intensities are given in parentheses.
Fluorescence excitation spectrum of for 5 SCCM SCCM at .
Relative LIF intensity of (a) as a function of addition at 10 SCCM and and 200 W and (b) as a function of with ; arrow denotes conditions where a change in coupling mode is observed.
Comparison of etch behavior and thermochemistry for F-based discharge systems.
for using plasmas, plasmas, and nonionized gas.
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