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Surface interactions of and passivation chemistry during etching of Si and in plasmas
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10.1116/1.3520126
/content/avs/journal/jvsta/29/1/10.1116/1.3520126
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/29/1/10.1116/1.3520126

Figures

Image of FIG. 1.
FIG. 1.

Si and etch rates and etch selectivity as a function of (a) flow rate with 10 SCCM and and 100 W and (b) applied rf power for .

Image of FIG. 2.
FIG. 2.

SEM images of Si wafers (top row) and wafers (bottom row) etched 5 min with and . The substrates in (a) and (c) were masked with 400 mesh Cu grid, and those in (b) and (d) were masked with 2000 mesh Cu grid. Scale bar in each image is .

Image of FIG. 3.
FIG. 3.

SEM images of exposed surfaces of (a) Si and (b) substrates after etching in plasma with and . Scale bar in each image is 100 nm.

Image of FIG. 4.
FIG. 4.

Atomic surface composition of Si, F, O, and Al as measured by ex situ XPS for (a) Si and (b) substrates as a function of addition at 10 SCCM and .

Image of FIG. 5.
FIG. 5.

Normalized OES intensities of (circles) and (triangles) in (a) as a function of addition at 10 SCCM and and 100 W and (b) as a function of with .

Image of FIG. 6.
FIG. 6.

Mass spectra of neutral species in (a) for 10 SCCM at with no addition and in (b) for 10 SCCM SCCM at (inverted for clarity). For peaks that extend beyond the figure boundaries, maximum intensities are given in parentheses.

Image of FIG. 7.
FIG. 7.

Fluorescence excitation spectrum of for 5 SCCM SCCM at .

Image of FIG. 8.
FIG. 8.

Relative LIF intensity of (a) as a function of addition at 10 SCCM and and 200 W and (b) as a function of with ; arrow denotes conditions where a change in coupling mode is observed.

Tables

Generic image for table
TABLE I.

Comparison of etch behavior and thermochemistry for F-based discharge systems.

Generic image for table
TABLE II.

for using plasmas, plasmas, and nonionized gas.

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/content/avs/journal/jvsta/29/1/10.1116/1.3520126
2011-01-04
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface interactions of SO2 and passivation chemistry during etching of Si and SiO2 in SF6/O2 plasmas
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/29/1/10.1116/1.3520126
10.1116/1.3520126
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