Influence of thermally diffused aluminum atoms from sapphire substrate on the properties of ZnO epilayers grown by metal-organic chemical vapor deposition
(Color online) AFM images of all samples. The scan range is .
Doping-concentration depth profile derived from measurements of (a) sample B, (b) sample C, and (c) sample D.
(Color online) (a) Temperature dependence of corrected electron-carrier concentration and corresponding fittings of samples B–D; (b) temperature dependence of Hall mobility of samples B–D.
(Color online) SIMS depth profile of (a) sample A, (b) sample B, (c) sample C, and (d) sample D.
(Color online) Relationship of averaged Al counts from SIMS vs averaged doping concentration from measurement for samples B–D.
Structural properties derived from AFM and HRXRD measurements of all samples.
Extracted electrical-fitting parameters of samples B–D.
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