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Influence of thermally diffused aluminum atoms from sapphire substrate on the properties of ZnO epilayers grown by metal-organic chemical vapor deposition
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10.1116/1.3549136
/content/avs/journal/jvsta/29/3/10.1116/1.3549136
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/29/3/10.1116/1.3549136

Figures

Image of FIG. 1.
FIG. 1.

(Color online) AFM images of all samples. The scan range is .

Image of FIG. 2.
FIG. 2.

Doping-concentration depth profile derived from measurements of (a) sample B, (b) sample C, and (c) sample D.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Temperature dependence of corrected electron-carrier concentration and corresponding fittings of samples B–D; (b) temperature dependence of Hall mobility of samples B–D.

Image of FIG. 4.
FIG. 4.

(Color online) SIMS depth profile of (a) sample A, (b) sample B, (c) sample C, and (d) sample D.

Image of FIG. 5.
FIG. 5.

(Color online) Relationship of averaged Al counts from SIMS vs averaged doping concentration from measurement for samples B–D.

Tables

Generic image for table
TABLE I.

Structural properties derived from AFM and HRXRD measurements of all samples.

Generic image for table
TABLE II.

Extracted electrical-fitting parameters of samples B–D.

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/content/avs/journal/jvsta/29/3/10.1116/1.3549136
2011-02-02
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of thermally diffused aluminum atoms from sapphire substrate on the properties of ZnO epilayers grown by metal-organic chemical vapor deposition
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/29/3/10.1116/1.3549136
10.1116/1.3549136
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