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Effects of gallium doping on properties of -plane ZnO films on -plane sapphire substrates by plasma-assisted molecular beam epitaxy
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10.1116/1.3562162
/content/avs/journal/jvsta/29/3/10.1116/1.3562162
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/29/3/10.1116/1.3562162

Figures

Image of FIG. 1.
FIG. 1.

(Color online) RHEED patterns from (a) undoped -plane ZnO film and Ga-doped ZnO films grown with different Ga cell temperatures of (b) , (c) , (d) , (e) , and (f) . All the images were taken after the growth finish along the and azimuths.

Image of FIG. 2.
FIG. 2.

(Color online) AFM images ( scan area) for (a) undoped -plane ZnO film and Ga-doped ZnO films grown with different Ga cell temperatures of (b) , (c) , (d) , (e) , and (f) . rms roughness values for each sample were plotted in (g).

Image of FIG. 3.
FIG. 3.

(a) XRD scan results from undoped and Ga-doped ZnO films and (b) a plot of -spacing value for the planes as function of the Ga cell temperature.

Image of FIG. 4.
FIG. 4.

(Color online) Plot of FWHM values for the XRCs with (a) and (b) configurations from the undoped and Ga-doped ZnO films.

Image of FIG. 5.
FIG. 5.

(Color online) (a) RT PL spectra of Ga-doped ZnO films and (b) a plot of peak position and intensity for NBE emission.

Image of FIG. 6.
FIG. 6.

Plots of the resistivity , electron concentration , and electron mobility of Ga-doped ZnO films as a function of the Ga cell temperature.

Image of FIG. 7.
FIG. 7.

Relative Ga intensity from SIMS measurements for Ga-doped ZnO films grown with different Ga cell temperatures.

Tables

Generic image for table
TABLE I.

Comparison of the FWHM values of XRC for -plane ZnO films grown with various substrates and growth methods.

Generic image for table
TABLE II.

Summaries of electron concentration and Hall mobility () measured by van der Pauw method for the undoped and the Ga-doped samples. and indicate Hall voltages along the two orthogonal directions. and were set to the - and -directions of ZnO in the measurements.

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/content/avs/journal/jvsta/29/3/10.1116/1.3562162
2011-03-09
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of gallium doping on properties of a-plane ZnO films on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/29/3/10.1116/1.3562162
10.1116/1.3562162
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