Effects of gallium doping on properties of -plane ZnO films on -plane sapphire substrates by plasma-assisted molecular beam epitaxy
(Color online) RHEED patterns from (a) undoped -plane ZnO film and Ga-doped ZnO films grown with different Ga cell temperatures of (b) , (c) , (d) , (e) , and (f) . All the images were taken after the growth finish along the and azimuths.
(Color online) AFM images ( scan area) for (a) undoped -plane ZnO film and Ga-doped ZnO films grown with different Ga cell temperatures of (b) , (c) , (d) , (e) , and (f) . rms roughness values for each sample were plotted in (g).
(a) XRD scan results from undoped and Ga-doped ZnO films and (b) a plot of -spacing value for the planes as function of the Ga cell temperature.
(Color online) Plot of FWHM values for the XRCs with (a) and (b) configurations from the undoped and Ga-doped ZnO films.
(Color online) (a) RT PL spectra of Ga-doped ZnO films and (b) a plot of peak position and intensity for NBE emission.
Plots of the resistivity , electron concentration , and electron mobility of Ga-doped ZnO films as a function of the Ga cell temperature.
Relative Ga intensity from SIMS measurements for Ga-doped ZnO films grown with different Ga cell temperatures.
Comparison of the FWHM values of XRC for -plane ZnO films grown with various substrates and growth methods.
Summaries of electron concentration and Hall mobility () measured by van der Pauw method for the undoped and the Ga-doped samples. and indicate Hall voltages along the two orthogonal directions. and were set to the - and -directions of ZnO in the measurements.
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