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Magnetic properties of ZnO:V films formed by pulsed laser deposition with bias voltage application
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10.1116/1.3579416
/content/avs/journal/jvsta/29/3/10.1116/1.3579416
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/29/3/10.1116/1.3579416
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of PLD technique with bias voltage application.

Image of FIG. 2.
FIG. 2.

XRD patterns for ZnO:V films with V concentrations of (a) 0%, (b) 7%, (c) 15%, and (d) 20%.

Image of FIG. 3.
FIG. 3.

SEM plane views of ZnO:V films with V concentrations of (a) 7% and (b) 15%.

Image of FIG. 4.
FIG. 4.

Carrier concentration of ZnO:V films doped with either Ga (-type) or P (-type) atoms without using PLD bias voltage. All the films were -type.

Image of FIG. 5.
FIG. 5.

Carrier (electron) concentration of ZnO:V films obtained under PLD bias voltage application.

Image of FIG. 6.
FIG. 6.

Typical curves for the ZnO:V films whose carrier concentrations were (a) and (b) .

Image of FIG. 7.
FIG. 7.

Relationship between carrier concentration and the magnetization of ZnO:V films obtained by using conventional -type and -type dopants without PLD bias voltage.

Image of FIG. 8.
FIG. 8.

Relationship between carrier concentration and the saturation magnetization of ZnO:V films obtained under PLD bias voltage application.

Image of FIG. 9.
FIG. 9.

Relationship between applied magnetic field and the Hall resistivity of the ZnO:V film with a low carrier concentration .

Image of FIG. 10.
FIG. 10.

Relationship between applied magnetic field and the Hall resistivity of the ZnO:V film with a medium carrier concentration .

Image of FIG. 11.
FIG. 11.

Relationship between V concentration and the saturation magnetization of ZnO:V films without using PLD bias voltage.

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/content/avs/journal/jvsta/29/3/10.1116/1.3579416
2011-04-12
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Magnetic properties of ZnO:V films formed by pulsed laser deposition with bias voltage application
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/29/3/10.1116/1.3579416
10.1116/1.3579416
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