Aging mechanism of the native oxide on silicon (100) following atmospheric oxygen plasma cleaning
Schematic of the plasma cleaning apparatus.
Infrared reflectance spectra acquired during aging of the silicon native oxide surface cleaned with RCA SC-1 and plasma.
Infrared reflectance spectrum of the C–H stretching region for silicon cleaned with plasma following 60 h of aging.
Infrared reflectance spectra of the O–H stretching region for silicon cleaned with (a) RCA SC-1, (b) plasma, and (c) RCA SC-1 with plasma.
Dependence of the water contact angle on the time for the native oxide of Si (100) aging under a nitrogen purge.
Fraction of vacant sites corresponding to O–H groups during aging of the silicon native oxide surface.
Fractional coverage of C–H stretching groups during aging of the silicon native oxide surface.
Properties of the infrared spectrum collected after 36 h of aging.
Rate parameters obtained by fitting Eq. (1) to the water contact angle data.
Rate parameters obtained by fitting Eqs. (3) and (5) to the infrared data.
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