Hydrogen profiles measured by SIMS for untreated and 80-s, N 2 plasma-treated silicon nitride films. (a) In positive mode and (b) in negative mode, with a high in-depth resolution.
t/λ, extracted from TEM dark-field analysis performed for an 80-s-treated film deposited above an untreated nitride film, is plotted as a function of the depth. The inset shows the corresponding TEM cross-section.
Evaluation of the stress, density, Δ[H], and Δ[SiN] as a function of plasma treatment duration on the first sample family (2-nm- to 350-nm-thick basic layer treated for 20 s).
Evaluation of the stress, density, [H], and [SiN] as a function of plasma treatment duration on the second sample family (3.5 nm-thick basic layer treated from 0 to 80 s).
Study of the validity of the bi-layer model for the first sample family. Normalized stress, density, [H], and [SiN] are plotted as a function of 1/et .
Evaluation of nitrogen to silicon ratio as a function of the plasma treatment duration for the second set of samples.
Scheme of the mechanism of stress generation through hydrogen dissociation and new SiN bond generation.
Stress increased as a function of the gain in SiN bonds occurring throughout nitrogen plasma treatment of 0 to 80 s.
SiN bond generation as a function of plasma treatment duration. Kinetic models of the orders 1 to 3 are also compared with experimental data.
Stress enhancement as a function of the nitrogen plasma treatment duration. Kinetic models of the orders 1 to 3 are also compared with experimental data.
Description of the two sets of samples.
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