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Study of stress in tensile nitrogen-plasma-treated multilayer silicon nitride films
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10.1116/1.3602082
/content/avs/journal/jvsta/29/4/10.1116/1.3602082
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/29/4/10.1116/1.3602082

Figures

Image of FIG. 1.
FIG. 1.

Hydrogen profiles measured by SIMS for untreated and 80-s, N 2 plasma-treated silicon nitride films. (a) In positive mode and (b) in negative mode, with a high in-depth resolution.

Image of FIG. 2.
FIG. 2.

t/λ, extracted from TEM dark-field analysis performed for an 80-s-treated film deposited above an untreated nitride film, is plotted as a function of the depth. The inset shows the corresponding TEM cross-section.

Image of FIG. 3.
FIG. 3.

Evaluation of the stress, density, Δ[H], and Δ[SiN] as a function of plasma treatment duration on the first sample family (2-nm- to 350-nm-thick basic layer treated for 20 s).

Image of FIG. 4.
FIG. 4.

Evaluation of the stress, density, [H], and [SiN] as a function of plasma treatment duration on the second sample family (3.5 nm-thick basic layer treated from 0 to 80 s).

Image of FIG. 5.
FIG. 5.

Study of the validity of the bi-layer model for the first sample family. Normalized stress, density, [H], and [SiN] are plotted as a function of 1/et .

Image of FIG. 6.
FIG. 6.

Evaluation of nitrogen to silicon ratio as a function of the plasma treatment duration for the second set of samples.

Image of FIG. 7.
FIG. 7.

Scheme of the mechanism of stress generation through hydrogen dissociation and new SiN bond generation.

Image of FIG. 8.
FIG. 8.

Stress increased as a function of the gain in SiN bonds occurring throughout nitrogen plasma treatment of 0 to 80 s.

Image of FIG. 9.
FIG. 9.

SiN bond generation as a function of plasma treatment duration. Kinetic models of the orders 1 to 3 are also compared with experimental data.

Image of FIG. 10.
FIG. 10.

Stress enhancement as a function of the nitrogen plasma treatment duration. Kinetic models of the orders 1 to 3 are also compared with experimental data.

Tables

Generic image for table
TABLE I.

Description of the two sets of samples.

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/content/avs/journal/jvsta/29/4/10.1116/1.3602082
2011-07-01
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of stress in tensile nitrogen-plasma-treated multilayer silicon nitride films
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/29/4/10.1116/1.3602082
10.1116/1.3602082
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