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Modelling of fluorine based high density plasma for the etching of silica glasses
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10.1116/1.3624786
/content/avs/journal/jvsta/29/5/10.1116/1.3624786
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/29/5/10.1116/1.3624786

Figures

Image of FIG. 1.
FIG. 1.

Methodology for modeling the silica-glass etching under SF6 plasma discharge.

Image of FIG. 2.
FIG. 2.

(Color online) Initial geometry submitted to the plasma precursors.

Image of FIG. 3.
FIG. 3.

Sputtering yields for the silicon (Si) and the metal (M) sites as a function of ion energy.

Image of FIG. 4.
FIG. 4.

Etch rates as a function of the pressure for a SF6 plasma (1500 W, 200 V, 40 sccm): (E) experiment and (M) model.

Image of FIG. 5.
FIG. 5.

Etch rates as a function of the dc bias for a SF6 plasma (1500 W, 10 mTorr, 40 sccm): (E) experiment and (M) model.

Image of FIG. 6.
FIG. 6.

Surface morphology for Pyrex obtained by AFM after etching under SF6 plasma (1500 W, 10 mTorr, 40 sccm), the etch time (3 min) corresponds to the etching of 0.5 μm.

Image of FIG. 7.
FIG. 7.

Etch-profile simulation of Pyrex for different adsorption probability values of the redeposited metallic M sites, (a) 0, (b) 0.25, (c) 0.5, (d) 0.75, and (e) 1 under SF6 plasma (p = 10 mTorr, P rf = 1500 W, V DC = 200 V, Q(SF6) = 40 sccm). In each figure five profile are shown, corresponding to the etching of 0.1, 0.2, 0.3, 0.4, and 0.5 μm from top to bottom.

Image of FIG. 8.
FIG. 8.

Etch-profile simulation of Pyrex for the adsorption probability of the redeposited metal-fluoride sites Pa ,red = 1.

Image of FIG. 9.
FIG. 9.

Density evolution of metal-fluoride sites along the trench bottom surface during the etching process of Pyrex for different etch depths. (a) 0.1, (b) 0.2, (c) 0.3, (d) 0.4, (e) 0.5 μm (p = 10 mTorr, P rf = 1500 W, V DC = 200 V, Q(SF6) = 40 sccm).

Image of FIG. 10.
FIG. 10.

Surface morphology of AF45 by AFM after etching under SF6 plasma (1500 W, 10 mTorr, 40 sccm). Etch time (10 min) corresponds to the etching of 0.5 μm.

Image of FIG. 11.
FIG. 11.

Etch profile simulation of AF45 for the adsorption probability of the redeposited metal-fluoride sites Pa ,red = 1.

Image of FIG. 12.
FIG. 12.

Density evolution of metal-fluoride sites along the trench bottom surface during the etching process of AF45 for different etch depths. (a) 0.1, (b) 0.2, (c) 0.3, (d) 0.4, (e) 0.5 μm (p = 10 mTorr, P rf = 1500 W, V DC = 200 V, Q(SF6) = 40 sccm).

Tables

Generic image for table
TABLE I.

Glass composition as given by the supplier (% oxide).

Generic image for table
TABLE II.

Reaction kinetics of silica glasses etching in SF6 plasma.

Generic image for table
TABLE III.

Sputtering parameters associated to the SiF x and MF y sites.

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/content/avs/journal/jvsta/29/5/10.1116/1.3624786
2011-08-22
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modelling of fluorine based high density plasma for the etching of silica glasses
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/29/5/10.1116/1.3624786
10.1116/1.3624786
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