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Compositional study of vacuum annealed Al doped ZnO thin films obtained by RF magnetron sputtering
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10.1116/1.3624787
/content/avs/journal/jvsta/29/5/10.1116/1.3624787
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/29/5/10.1116/1.3624787
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Deposition rate with respect to power of deposition at different substrate temperatures.

Image of FIG. 2.
FIG. 2.

Diffraction pattern for various deposition powers at (a) 200 °C and (b) 250 °C.

Image of FIG. 3.
FIG. 3.

SEM images of the deposited AZO films (a) 125 W at 200 °C, (b) 175 W at 200 °C, and (c) 125 W at 250 °C.

Image of FIG. 4.
FIG. 4.

Atomic concentration of aluminum with respect to various deposition power and at 200 and 250 °C deposition temperatures.

Image of FIG. 5.
FIG. 5.

O1s photoelectron peaks in the XPS spectra of AZO films prepared at 125 W and 200 °C substrate heating temperature.

Image of FIG. 6.
FIG. 6.

Relative strengths of O1s peaks (OI, OII, OIII, and OIV) for the AZO thin film deposited at (a) 200 °C, (b) 250 °C substrate heating temperatures and varying deposition powers.

Image of FIG. 7.
FIG. 7.

O1s photoelectron peaks in the XPS spectra of AZO films prepared at (a) 175 W and 250 °C substrate heating temperature, (b) annealed in vacuum at 300 °C, (c) annealed in vacuum at 400 °C.

Image of FIG. 8.
FIG. 8.

Relative strengths of O1s peaks (OI, OII, OIII, and OIV) after annealing for the AZO thin film deposited at 175 W and (a) 200 °C, (b) 250 °C substrate heating temperatures.

Image of FIG. 9.
FIG. 9.

Plot of resistivity for ZnO:Al thin film obtained at (a) various deposition powers and substrate heating temperatures, (b) after vacuum annealing of film obtained at 175 W for both 200 and 250 °C substrate heating temperatures.

Image of FIG. 10.
FIG. 10.

Percentage transmission of the AZO thin films deposited with various deposition powers at (a) 200 and (b) 250 °C substrate heating temperatures.

Image of FIG. 11.
FIG. 11.

Percentage transmission of the AZO thin films deposited at 175 W under (a) 200 °C and (b) 250 °C substrate heating temperatures after vacuum annealing at higher temperatures.

Image of FIG. 12.
FIG. 12.

Variation of refractive index n as a function of wavelength for AZO thin films deposited on glass substrate with different deposition powers with (a) 200 °C and (b) 250 °C substrate heating.

Image of FIG. 13.
FIG. 13.

Refractive index n as a function of wavelength for AZO thin films vacuum annealed at various high temperatures for a film deposited on glass corning substrate with 175 W power at (a) 200 °C and (b) 250 °C substrate heating temperature.

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/content/avs/journal/jvsta/29/5/10.1116/1.3624787
2011-08-18
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Compositional study of vacuum annealed Al doped ZnO thin films obtained by RF magnetron sputtering
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/29/5/10.1116/1.3624787
10.1116/1.3624787
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