banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Improvements to bit line contact processing in trench DRAM
Rent this article for


Image of FIG. 1.
FIG. 1.

(Color online) Cross section of the I-PVD system.

Image of FIG. 2.
FIG. 2.

(Color online) Magnetic field simulation of the chamber (a) with or (b) without electromagnet coil to modulate the magnetic field for ion trajectory change.

Image of FIG. 3.
FIG. 3.

(Color online) Sheet resistance variations in various chamber ambients.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Top-view of a wafer. (b) Cross section and structure of bit-line contacts.

Image of FIG. 5.
FIG. 5.

TEM cross sections of (a) a failed contact with a thicker Ti stack layer and (b) a good contact with a thinner Ti stack layer.

Image of FIG. 6.
FIG. 6.

(Color online) XRD spectra of the bit line contact surface with and without extra N2.

Image of FIG. 7.
FIG. 7.

(Color online) TEM side-view images of (a) deformed contacts to bit-line (CB) bottom and (b) flat contacts to bit-line (CB) bottom.

Image of FIG. 8.
FIG. 8.

(Color online) Enlarged image of a deformed contact.

Image of FIG. 9.
FIG. 9.

(Color online) Resputter ratio at different sites under different bias powers from 100 to 400 W. (Site locations are shown in Table I.)

Image of FIG. 10.
FIG. 10.

(Color online) TEM images of the deposited contact with (a) a lower RF power of 150 W and (b) a higher RF power of 250 W.


Generic image for table

Site locations in polar coordinates.


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvements to bit line contact processing in trench DRAM