Improvements to bit line contact processing in trench DRAM
(Color online) Cross section of the I-PVD system.
(Color online) Magnetic field simulation of the chamber (a) with or (b) without electromagnet coil to modulate the magnetic field for ion trajectory change.
(Color online) Sheet resistance variations in various chamber ambients.
(Color online) (a) Top-view of a wafer. (b) Cross section and structure of bit-line contacts.
TEM cross sections of (a) a failed contact with a thicker Ti stack layer and (b) a good contact with a thinner Ti stack layer.
(Color online) XRD spectra of the bit line contact surface with and without extra N2.
(Color online) TEM side-view images of (a) deformed contacts to bit-line (CB) bottom and (b) flat contacts to bit-line (CB) bottom.
(Color online) Enlarged image of a deformed contact.
(Color online) Resputter ratio at different sites under different bias powers from 100 to 400 W. (Site locations are shown in Table I.)
(Color online) TEM images of the deposited contact with (a) a lower RF power of 150 W and (b) a higher RF power of 250 W.
Site locations in polar coordinates.
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